Identification of electrical properties in individual thickness layers in aluminium-doped zinc oxide films sputtered at 100 degrees C

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F18%3A43952397" target="_blank" >RIV/49777513:23520/18:43952397 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23640/18:43952397

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2018.06.036" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2018.06.036</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2018.06.036" target="_blank" >10.1016/j.tsf.2018.06.036</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Identification of electrical properties in individual thickness layers in aluminium-doped zinc oxide films sputtered at 100 degrees C

Popis výsledku v původním jazyce

This work presents a detailed study of aluminium-doped zinc oxide thin films sputtered at 100 °C, with a focus on the correlation between structural and electrical properties. The structural properties are identified by SEM microscopy and X-ray diffraction, while the electrical properties are described by means of the carrier concentration and the carrier mobility, both determined experimentally. The study consists of a set of thin films with thicknesses from ~16 to ~1120 nm. Our analysis shows that the electrical properties in each individual thickness layer gradually change with its distance from the substrate, which correlates very well to the changes observed in structural properties. Along with our experimental findings, we have designed a one-dimensional mathematical model based on the trapping states related to the grain boundaries. This model offers a deeper insight into the relation between the film structure and the film resistivity and allows identification of additional material characteristics such us the trap density at the grain boundary.

Název v anglickém jazyce

Identification of electrical properties in individual thickness layers in aluminium-doped zinc oxide films sputtered at 100 degrees C

Popis výsledku anglicky

This work presents a detailed study of aluminium-doped zinc oxide thin films sputtered at 100 °C, with a focus on the correlation between structural and electrical properties. The structural properties are identified by SEM microscopy and X-ray diffraction, while the electrical properties are described by means of the carrier concentration and the carrier mobility, both determined experimentally. The study consists of a set of thin films with thicknesses from ~16 to ~1120 nm. Our analysis shows that the electrical properties in each individual thickness layer gradually change with its distance from the substrate, which correlates very well to the changes observed in structural properties. Along with our experimental findings, we have designed a one-dimensional mathematical model based on the trapping states related to the grain boundaries. This model offers a deeper insight into the relation between the film structure and the film resistivity and allows identification of additional material characteristics such us the trap density at the grain boundary.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

660

Číslo periodika v rámci svazku

AUG 30 2018

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

471-476

Kód UT WoS článku

000441177500063

EID výsledku v databázi Scopus

2-s2.0-85049305656