Optical properties of the plasma hydrogenated ZnO thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00481245" target="_blank" >RIV/68378271:_____/17:00481245 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1515/jee-2017-0060" target="_blank" >http://dx.doi.org/10.1515/jee-2017-0060</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1515/jee-2017-0060" target="_blank" >10.1515/jee-2017-0060</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical properties of the plasma hydrogenated ZnO thin films

Popis výsledku v původním jazyce

We have optimized the deposition of the highly electrically resistive undoped polycrystalline ZnO thin layers on fused silica substrates by the DC reactive magnetron sputtering of metallic zinc target in argonne/oxide atmosphere and we introduced the postdeposition hydrogen plasma doping. The thickness of thin film was evaluated by reflectance interferometry using the metallographic optical microscope fiber coupled to the CCD spectrometer operating in 400 to 1000 nm spectral range. The optical absorption was measured by photothermal deflection spectroscopy operating in 300 - 1600 nm spectral range. The change of the optical absorption edge and the increase of the infrared optical absorption was detected in hydrogenated ZnO. The increase of the infrared optical absorption goes with the increase of the electrical conductivity. We conclude that the plasma hydrogenation of the intrinsic ZnO thin films is related to increase of the free carrier concentration.n

Název v anglickém jazyce

Optical properties of the plasma hydrogenated ZnO thin films

Popis výsledku anglicky

We have optimized the deposition of the highly electrically resistive undoped polycrystalline ZnO thin layers on fused silica substrates by the DC reactive magnetron sputtering of metallic zinc target in argonne/oxide atmosphere and we introduced the postdeposition hydrogen plasma doping. The thickness of thin film was evaluated by reflectance interferometry using the metallographic optical microscope fiber coupled to the CCD spectrometer operating in 400 to 1000 nm spectral range. The optical absorption was measured by photothermal deflection spectroscopy operating in 300 - 1600 nm spectral range. The change of the optical absorption edge and the increase of the infrared optical absorption was detected in hydrogenated ZnO. The increase of the infrared optical absorption goes with the increase of the electrical conductivity. We conclude that the plasma hydrogenation of the intrinsic ZnO thin films is related to increase of the free carrier concentration.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electrical Engineering - Elektrotechnický časopis

ISSN

1335-3632

e-ISSN

—

Svazek periodika

68

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

4

Strana od-do

70-73

Kód UT WoS článku

000423262300014

EID výsledku v databázi Scopus

2-s2.0-85040807874