DC magnetron sputtering of ZnO thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00487114" target="_blank" >RIV/68378271:_____/17:00487114 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

DC magnetron sputtering of ZnO thin films

Popis výsledku v původním jazyce

Zinc Oxide (ZnO) is a semiconductor with a wide band gap, large exciton binding energy, high electron mobility, high refractive index, high biocompatibility and diversity of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. Our samples are the nominally undoped ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma and the aluminium doped ZnO thin films deposited by DC magnetron sputtering of ZnO:Al target in the argon. After hydrogen plasma treatment, the increase of the infrared optical absorption, related to free carrier concentration, is detected below the optical absorption edge. The increase of the optical absorption correlates with the increase of the electrical conductivity related to the increase of the free carrier concentration. On the other hand, after oxidation and thermal annealing in air, the optical absorption is significantly reduced in the infrared region and the electrical resistivity increases.

Název v anglickém jazyce

DC magnetron sputtering of ZnO thin films

Popis výsledku anglicky

Zinc Oxide (ZnO) is a semiconductor with a wide band gap, large exciton binding energy, high electron mobility, high refractive index, high biocompatibility and diversity of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. Our samples are the nominally undoped ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma and the aluminium doped ZnO thin films deposited by DC magnetron sputtering of ZnO:Al target in the argon. After hydrogen plasma treatment, the increase of the infrared optical absorption, related to free carrier concentration, is detected below the optical absorption edge. The increase of the optical absorption correlates with the increase of the electrical conductivity related to the increase of the free carrier concentration. On the other hand, after oxidation and thermal annealing in air, the optical absorption is significantly reduced in the infrared region and the electrical resistivity increases.

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů