The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49610040%3A_____%2F04%3A00000004" target="_blank" >RIV/49610040:_____/04:00000004 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/04:00107340 RIV/49610040:_____/05:00000032

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Popis výsledku v původním jazyce

Silicon thin films grown near the boundary between the amorphous/microcrystalline growth offer superior properties for industrial applications. Series of silicon samples, in which crossing of this transition region was achieved by changing a single techn(dilution of silane in hydrogen, deposition temperature, sample thickness) were used to test our model of transport, connecting the macroscopically observed transport properties and the crystallinity, hydrogen content, grain size and grain boundaries. Microscopic study by AFM led to the formulation of the geometrical model of growth of mixed phase Si. The demand for research of microcrystalline or polycrystalline silicon prepared at low substrate temperatures is stimulated by the use of cheap plastic Inaddition to a direct deposition an alternative technology, such as metal-induced crystallization supported by the electric field is discussed. Possible future application of thin silicon films, for example in a nanolithography, is also s

Název v anglickém jazyce

The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Popis výsledku anglicky

Silicon thin films grown near the boundary between the amorphous/microcrystalline growth offer superior properties for industrial applications. Series of silicon samples, in which crossing of this transition region was achieved by changing a single techn(dilution of silane in hydrogen, deposition temperature, sample thickness) were used to test our model of transport, connecting the macroscopically observed transport properties and the crystallinity, hydrogen content, grain size and grain boundaries. Microscopic study by AFM led to the formulation of the geometrical model of growth of mixed phase Si. The demand for research of microcrystalline or polycrystalline silicon prepared at low substrate temperatures is stimulated by the use of cheap plastic Inaddition to a direct deposition an alternative technology, such as metal-induced crystallization supported by the electric field is discussed. Possible future application of thin silicon films, for example in a nanolithography, is also s

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

physica status solidi (c)

ISSN

1610-1634

e-ISSN

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Svazek periodika

Volume 1

Číslo periodika v rámci svazku

Issue 5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

18

Strana od-do

1097-1114

Kód UT WoS článku

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EID výsledku v databázi Scopus

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