Dependence of the ZrO2 growth on the crystal orientation: growth simulations and magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F22%3A43963401" target="_blank" >RIV/49777513:23520/22:43963401 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2021.151422" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.151422</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2021.151422" target="_blank" >10.1016/j.apsusc.2021.151422</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dependence of the ZrO2 growth on the crystal orientation: growth simulations and magnetron sputtering

Popis výsledku v původním jazyce

The growth of crystalline ZrO2 is studied by a combined approach of atom-by-atom growth simulations, high-power impulse magnetron sputtering and conventional pulsed magnetron sputtering. We focus on the energy of arriving atoms of various elements and investigate how does it affect the growth of ZrO2 crystals of various orientations. The results are correlated with quantities such as surface energy and horizontal periodicity of individual orientations. Simulations show that the growth of orientations characterized by high surface energy and short horizontal period, (001) in the first place, requires higher energy delivered by arriving atoms, and that the energy is more effectively delivered by heavy Zr than by light O. Experiments confirm that the relative preference of such orientations increases with increasing substrate bias voltage, increasing concentration of ions which are subsequently accelerated by the bias voltage, and synchronization of the pulsed bias voltage with the arrival of heavy Zr+ ions.

Název v anglickém jazyce

Dependence of the ZrO2 growth on the crystal orientation: growth simulations and magnetron sputtering

Popis výsledku anglicky

The growth of crystalline ZrO2 is studied by a combined approach of atom-by-atom growth simulations, high-power impulse magnetron sputtering and conventional pulsed magnetron sputtering. We focus on the energy of arriving atoms of various elements and investigate how does it affect the growth of ZrO2 crystals of various orientations. The results are correlated with quantities such as surface energy and horizontal periodicity of individual orientations. Simulations show that the growth of orientations characterized by high surface energy and short horizontal period, (001) in the first place, requires higher energy delivered by arriving atoms, and that the energy is more effectively delivered by heavy Zr than by light O. Experiments confirm that the relative preference of such orientations increases with increasing substrate bias voltage, increasing concentration of ions which are subsequently accelerated by the bias voltage, and synchronization of the pulsed bias voltage with the arrival of heavy Zr+ ions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/GA19-14011S" target="_blank" >GA19-14011S: Design nových funkčních materiálů, a cest pro jejich reaktivní magnetronové naprašování, pomocí pokročilých počítačových simulací</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

APPLIED SURFACE SCIENCE

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

572

Číslo periodika v rámci svazku

15 JAN 2022

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000729889700001

EID výsledku v databázi Scopus

2-s2.0-85116680806