Simulating the transport of atoms during HiPIMS deposition of NbC from a compound target
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43972643" target="_blank" >RIV/49777513:23520/24:43972643 - isvavai.cz</a>
Výsledek na webu
—
DOI - Digital Object Identifier
—
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Simulating the transport of atoms during HiPIMS deposition of NbC from a compound target
Popis výsledku v původním jazyce
This presentation focuses on explaining the observed change in the composition of NbC films deposited by HiPIMS from a single compound target for varying pulse-average target power density. We employ computer simulations based on an in-house DSMC code which enables to simulate the transport of atoms and ions and their mutual collisions in the discharge. The simulation is fully three-dimensional and is constrained by target voltage and current waveforms which ensures good compliance with experimental discharge conditions. We calculate the degree of ionization of Nb and C above the target, the rates of C and Nb collisions in the discharge plasma and estimate the flux and energy of backscattered Ar atoms onto the substrate. We correlate these simulation results with the experimentally observed trend in film composition.
Název v anglickém jazyce
Simulating the transport of atoms during HiPIMS deposition of NbC from a compound target
Popis výsledku anglicky
This presentation focuses on explaining the observed change in the composition of NbC films deposited by HiPIMS from a single compound target for varying pulse-average target power density. We employ computer simulations based on an in-house DSMC code which enables to simulate the transport of atoms and ions and their mutual collisions in the discharge. The simulation is fully three-dimensional and is constrained by target voltage and current waveforms which ensures good compliance with experimental discharge conditions. We calculate the degree of ionization of Nb and C above the target, the rates of C and Nb collisions in the discharge plasma and estimate the flux and energy of backscattered Ar atoms onto the substrate. We correlate these simulation results with the experimentally observed trend in film composition.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
—
OECD FORD obor
10305 - Fluids and plasma physics (including surface physics)
Návaznosti výsledku
Projekt
—
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2024
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů