Structural properties of amorphous silicon prepared from hydrogen-diluted silane

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F09%3A00502067" target="_blank" >RIV/49777513:23640/09:00502067 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Structural properties of amorphous silicon prepared from hydrogen-diluted silane

Popis výsledku v původním jazyce

A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of silane during the growth of a-Si:H absorber layers is used to suppresslight-induced degradation of a-Si:H solar cells. Transmission electron microscopy (TEM) shows that for higher hydrogen dilution ratios the growth of films becomes strongly inhomogeneous and the transition from amorphous to microcrystalline phase occursat a smaller thickness. A detailed X-ray diffraction (XRD) analysis of the amorphous films reveals that the strongest peak in the XRD patterns is located around 27.5° and corresponds to the signal from the ordered domains of tetragonal silicon hydride and not from cubic silicon crystallites. The full width at half maximum of this peak narrows from 5.1° to 4.8° as the ratio of hydrogen to silane flow (R) increases to 20 and does not change significantly for higher hydrogen dilutions. The

Název v anglickém jazyce

Structural properties of amorphous silicon prepared from hydrogen-diluted silane

Popis výsledku anglicky

A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of silane during the growth of a-Si:H absorber layers is used to suppresslight-induced degradation of a-Si:H solar cells. Transmission electron microscopy (TEM) shows that for higher hydrogen dilution ratios the growth of films becomes strongly inhomogeneous and the transition from amorphous to microcrystalline phase occursat a smaller thickness. A detailed X-ray diffraction (XRD) analysis of the amorphous films reveals that the strongest peak in the XRD patterns is located around 27.5° and corresponds to the signal from the ordered domains of tetragonal silicon hydride and not from cubic silicon crystallites. The full width at half maximum of this peak narrows from 5.1° to 4.8° as the ratio of hydrogen to silane flow (R) increases to 20 and does not change significantly for higher hydrogen dilutions. The

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/1M06031" target="_blank" >1M06031: Materiály a komponenty pro ochranu životního prostředí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Philosophical Magazine

ISSN

1478-6435

e-ISSN

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Svazek periodika

89

Číslo periodika v rámci svazku

28-30

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

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Kód UT WoS článku

000271871300003

EID výsledku v databázi Scopus

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