Medium-range order in a-Si:H films prepared from hydrogen diluted silane

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A00503362" target="_blank" >RIV/49777513:23640/10:00503362 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Medium-range order in a-Si:H films prepared from hydrogen diluted silane

Popis výsledku v původním jazyce

A systematic and detailed analysis of the influence of hydrogen (H2) dilution of silane (SiH4) on the structural properties of thin hydrogenated silicon (Si:H) films was carried out. The Si:H films were prepared by plasma enhanced chemical vapour deposition method at different H2 to SiH4 flow ratios (R) ranging from R=0 to 40. A detailed structural analysis was carried out by X-ray diffraction (XRD). In order to suppress the XRD intensity from the substrate, Si:H films were deposited onto a [100]-oriented single-crystalline silicon substrate and XRD was carried out with a thin-film attachment. The XRD analysis demonstrated that the first diffraction peak in the Si:H films corresponded to the signal from silicon hydride (Si4H) ordered domains having tetragonal lattice structure. The full width of half maximum (FWHM) of the peak was decreasing with increasing H2 dilution, and remained nearly constant for R>20. The FWHMvalues confirmed that the Si:H films grown at R>20 are more ordered th

Název v anglickém jazyce

Medium-range order in a-Si:H films prepared from hydrogen diluted silane

Popis výsledku anglicky

A systematic and detailed analysis of the influence of hydrogen (H2) dilution of silane (SiH4) on the structural properties of thin hydrogenated silicon (Si:H) films was carried out. The Si:H films were prepared by plasma enhanced chemical vapour deposition method at different H2 to SiH4 flow ratios (R) ranging from R=0 to 40. A detailed structural analysis was carried out by X-ray diffraction (XRD). In order to suppress the XRD intensity from the substrate, Si:H films were deposited onto a [100]-oriented single-crystalline silicon substrate and XRD was carried out with a thin-film attachment. The XRD analysis demonstrated that the first diffraction peak in the Si:H films corresponded to the signal from silicon hydride (Si4H) ordered domains having tetragonal lattice structure. The full width of half maximum (FWHM) of the peak was decreasing with increasing H2 dilution, and remained nearly constant for R>20. The FWHMvalues confirmed that the Si:H films grown at R>20 are more ordered th

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/1M06031" target="_blank" >1M06031: Materiály a komponenty pro ochranu životního prostředí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi A - Applications and Materials Science

ISSN

1862-6300

e-ISSN

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Svazek periodika

207

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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