Crystallization process of amorphous silicon films on glass monitored by in-situ XRD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F09%3A00502543" target="_blank" >RIV/49777513:23640/09:00502543 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Crystallization process of amorphous silicon films on glass monitored by in-situ XRD

Popis výsledku v původním jazyce

The crystallization process of amorphous silicon (a-Si) and hydrogenated a-Si (a-Si:H) films by solid phase crystallization (SPC) was monitored by in-situ X-ray diffraction (XRD). The expanding thermal plasma CVD (ETP CVD) and electron beam (EB) evaporation were used for the deposition of a-Si:H and a-Si films, respectively. The properties of the a-Si(:H) films were determined prior to crystallization by Fourier transform infrared spectroscopy, Raman spectroscopy and XRD. The crystallization process wasinvestigated by using a high temperature chamber adapted for ?in situ? monitoring by XRD. These experiments were carried out at temperatures in the range of 580 to 620 °C and provided us with information about the transition of the amorphous to the polycrystalline state. The transition behavior differed for films with and without the presence of hydrogen. The presence of hydrogen affected the annealing time required for full crystallization. The phase transformation is slightly influenc

Název v anglickém jazyce

Crystallization process of amorphous silicon films on glass monitored by in-situ XRD

Popis výsledku anglicky

The crystallization process of amorphous silicon (a-Si) and hydrogenated a-Si (a-Si:H) films by solid phase crystallization (SPC) was monitored by in-situ X-ray diffraction (XRD). The expanding thermal plasma CVD (ETP CVD) and electron beam (EB) evaporation were used for the deposition of a-Si:H and a-Si films, respectively. The properties of the a-Si(:H) films were determined prior to crystallization by Fourier transform infrared spectroscopy, Raman spectroscopy and XRD. The crystallization process wasinvestigated by using a high temperature chamber adapted for ?in situ? monitoring by XRD. These experiments were carried out at temperatures in the range of 580 to 620 °C and provided us with information about the transition of the amorphous to the polycrystalline state. The transition behavior differed for films with and without the presence of hydrogen. The presence of hydrogen affected the annealing time required for full crystallization. The phase transformation is slightly influenc

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/1M06031" target="_blank" >1M06031: Materiály a komponenty pro ochranu životního prostředí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

24th European Photovoltaic Solar Energy Conference and Exhibition

ISBN

3-936338-25-6

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

WIP - Renewable Energies

Místo vydání

Munich

Místo konání akce

Hamburg, Germany

Datum konání akce

25. 9. 2009

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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