Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43924054" target="_blank" >RIV/49777513:23640/14:43924054 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1166/sl.2014.3399" target="_blank" >http://dx.doi.org/10.1166/sl.2014.3399</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/sl.2014.3399" target="_blank" >10.1166/sl.2014.3399</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering

Popis výsledku v původním jazyce

Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of applications such as biosensors and acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (002) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of a shear horizontal wave, a-axis film textures such as the(110) or (100) are necessary. This work is focused on the preferred orientation control of ZnO film prepared by radio frequency magnetron sputtering. It was found that preferred orientation can be controlled by energy delivered to unit volume of the film at suitable substrate temperature. We have identified three different deposition regimes leading to distinctive preferred orientation.

Název v anglickém jazyce

Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering

Popis výsledku anglicky

Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of applications such as biosensors and acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (002) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of a shear horizontal wave, a-axis film textures such as the(110) or (100) are necessary. This work is focused on the preferred orientation control of ZnO film prepared by radio frequency magnetron sputtering. It was found that preferred orientation can be controlled by energy delivered to unit volume of the film at suitable substrate temperature. We have identified three different deposition regimes leading to distinctive preferred orientation.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Sensor Letters

ISSN

1546-198X

e-ISSN

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Svazek periodika

12

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

CA - Kanada

Počet stran výsledku

5

Strana od-do

1760-1764

Kód UT WoS článku

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EID výsledku v databázi Scopus

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