Ab initio study of the electronic and optical properties of Ag3AuS2 polymorphs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F17%3A43962221" target="_blank" >RIV/49777513:23640/17:43962221 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/2053-1591/aa817a/pdf" target="_blank" >https://iopscience.iop.org/article/10.1088/2053-1591/aa817a/pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/2053-1591/aa817a" target="_blank" >10.1088/2053-1591/aa817a</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ab initio study of the electronic and optical properties of Ag3AuS2 polymorphs

Popis výsledku v původním jazyce

Natural and synthetic uytenbogaardtite (Ag3AuS2) polymorphs have been studied for their structural, compositional and thermodynamic properties. We investigated their electronic and optical properties for the first time using density functional theory. These calculations are based on the full potential linearized augmented plane wave method using the modified Becke-Johnson potential. Our calculations reveal that Ag3AuS2 is a direct band gap semiconductor exhibiting three crystal phases, cubic, trigonal and triclinic. The calculated band gaps for cubic, trigonal and triclinic phases are 1.15, 2.15 and 1.73 eV, respectively. The band gaps of the Ag3AuS2 polymorphs in the near infrared and visible region highlight the importance of these polymorphs for optoelectronic applications such as resistive switches, low-loss optical fibers, thin-film solar cells and thin-film photovoltaic devices. Furthermore, our calculations show that the electronic and optical properties of Ag3AuS2 are crystal phase dependent.

Název v anglickém jazyce

Ab initio study of the electronic and optical properties of Ag3AuS2 polymorphs

Popis výsledku anglicky

Natural and synthetic uytenbogaardtite (Ag3AuS2) polymorphs have been studied for their structural, compositional and thermodynamic properties. We investigated their electronic and optical properties for the first time using density functional theory. These calculations are based on the full potential linearized augmented plane wave method using the modified Becke-Johnson potential. Our calculations reveal that Ag3AuS2 is a direct band gap semiconductor exhibiting three crystal phases, cubic, trigonal and triclinic. The calculated band gaps for cubic, trigonal and triclinic phases are 1.15, 2.15 and 1.73 eV, respectively. The band gaps of the Ag3AuS2 polymorphs in the near infrared and visible region highlight the importance of these polymorphs for optoelectronic applications such as resistive switches, low-loss optical fibers, thin-film solar cells and thin-film photovoltaic devices. Furthermore, our calculations show that the electronic and optical properties of Ag3AuS2 are crystal phase dependent.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Research Express

ISSN

2053-1591

e-ISSN

—

Svazek periodika

4

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

000408512100001

EID výsledku v databázi Scopus

2-s2.0-85029181258