Impact of sublayer thickness and annealing on silicon nanostructures formation in alpha-Si:1-1/alpha-SiNx:H superlattices for photovoltaics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F18%3A43951229" target="_blank" >RIV/49777513:23640/18:43951229 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.vacuum.2018.04.009" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2018.04.009</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2018.04.009" target="_blank" >10.1016/j.vacuum.2018.04.009</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Impact of sublayer thickness and annealing on silicon nanostructures formation in alpha-Si:1-1/alpha-SiNx:H superlattices for photovoltaics

Popis výsledku v původním jazyce

Formation of silicon nanostructures embedded in silicon nitride layers can be of great interest for micro and optoelectronic devices such as non-volatile memories and solar cells. In this work, we synthesized amorphous multilayered a-Si:H/a-SiNx:H superlattice structures with different thickness of sublayers grown on silicon and quartz substrates by the plasma enhanced chemical vapor deposition method at 250°C using nitrogen and silane gases as the reactive precursors. Subsequently, the post-deposition annealing of these structures, composed of alternating layers of a-Si:H and a-SiNx:H, was carried out up to 1100° in vacuum to form Si-nanostructures. The dependences of the photoluminescence, structural and chemical bonding characteristics of superlattice nanostructures on the silicon sublayer thickness and post-deposition annealing temperature were investigated. The formation of silicon nanocrystals was confirmed by the transmission electron microscopy and X-ray diffraction measurements. Evolution of Si nanoclusters during high temperature treatment was examined by Raman scattering spectroscopy. Changing of bonding configuration during the annealing was carried out by Fourier transform infrared spectroscopy. The optical properties were studied by UV-VIS and photoluminescence spectroscopy. Results clearly show that structural and optical characteristics of these systems can be controlled by deposition parameters and annealing.

Název v anglickém jazyce

Impact of sublayer thickness and annealing on silicon nanostructures formation in alpha-Si:1-1/alpha-SiNx:H superlattices for photovoltaics

Popis výsledku anglicky

Formation of silicon nanostructures embedded in silicon nitride layers can be of great interest for micro and optoelectronic devices such as non-volatile memories and solar cells. In this work, we synthesized amorphous multilayered a-Si:H/a-SiNx:H superlattice structures with different thickness of sublayers grown on silicon and quartz substrates by the plasma enhanced chemical vapor deposition method at 250°C using nitrogen and silane gases as the reactive precursors. Subsequently, the post-deposition annealing of these structures, composed of alternating layers of a-Si:H and a-SiNx:H, was carried out up to 1100° in vacuum to form Si-nanostructures. The dependences of the photoluminescence, structural and chemical bonding characteristics of superlattice nanostructures on the silicon sublayer thickness and post-deposition annealing temperature were investigated. The formation of silicon nanocrystals was confirmed by the transmission electron microscopy and X-ray diffraction measurements. Evolution of Si nanoclusters during high temperature treatment was examined by Raman scattering spectroscopy. Changing of bonding configuration during the annealing was carried out by Fourier transform infrared spectroscopy. The optical properties were studied by UV-VIS and photoluminescence spectroscopy. Results clearly show that structural and optical characteristics of these systems can be controlled by deposition parameters and annealing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

<a href="/cs/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

—

Svazek periodika

153

Číslo periodika v rámci svazku

July 2018

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

154-161

Kód UT WoS článku

000437043400024

EID výsledku v databázi Scopus

2-s2.0-85045393069