Photoelectrical properties and the electronic structure of Tl1-xIn1-xSnxSe2 (x=0, 0.1, 0.2, 0.25) single crystalline alloys
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12520%2F13%3A43885145" target="_blank" >RIV/60076658:12520/13:43885145 - isvavai.cz</a>
Výsledek na webu
<a href="http://pubs.rsc.org/en/Content/ArticleLanding/2013/CP/c3cp50836f#!divAbstract" target="_blank" >http://pubs.rsc.org/en/Content/ArticleLanding/2013/CP/c3cp50836f#!divAbstract</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/c3cp50836f" target="_blank" >10.1039/c3cp50836f</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Photoelectrical properties and the electronic structure of Tl1-xIn1-xSnxSe2 (x=0, 0.1, 0.2, 0.25) single crystalline alloys
Popis výsledku v původním jazyce
Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of centerre-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar+-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the
Název v anglickém jazyce
Photoelectrical properties and the electronic structure of Tl1-xIn1-xSnxSe2 (x=0, 0.1, 0.2, 0.25) single crystalline alloys
Popis výsledku anglicky
Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of centerre-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar+-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BO - Biofyzika
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/ED2.1.00%2F01.0024" target="_blank" >ED2.1.00/01.0024: Jihočeské výzkumné centrum akvakultury a biodiverzity hydrocenóz</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2013
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Physical Chemistry Chemical Physics
ISSN
1463-9076
e-ISSN
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Svazek periodika
15
Číslo periodika v rámci svazku
18
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
8
Strana od-do
6965-6972
Kód UT WoS článku
000317866300047
EID výsledku v databázi Scopus
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