Ni-based ohmic contacts on 4H-SiC of n-type

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F09%3A00021577" target="_blank" >RIV/60461373:22310/09:00021577 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ni-based ohmic contacts on 4H-SiC of n-type

Popis výsledku v původním jazyce

We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formatio

Název v anglickém jazyce

Ni-based ohmic contacts on 4H-SiC of n-type

Popis výsledku anglicky

We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formatio

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings Electronic Devices and Systems IMAPS CS International Conference 2009

ISBN

978-80-214-3933-7

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

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Název nakladatele

VUT Brno

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

2. 9. 2009

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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