Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43880058" target="_blank" >RIV/60461373:22310/11:43880058 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.mee.2010.06.039" target="_blank" >http://dx.doi.org/10.1016/j.mee.2010.06.039</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mee.2010.06.039" target="_blank" >10.1016/j.mee.2010.06.039</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation

Popis výsledku v původním jazyce

This work is dealing with the influence of surface treatment on ohmic contacts to hexagonal N-type SiC with medium doping level. The contact materials were Ni and Ni2Si. The structures had to be annealed at high temperatures in order to reach ohmic behavior. A number of surface treatment methods were tested: wet cleaning, plasma etching, intentional oxidation with etching, H2 annealing and their combinations. After some types of cleaning, the SiC surface was immediately analysed using the XPS method. The results of the analyses showed that the composition of the surface was not much influenced by these treatments. At lower annealing temperatures (approx. up to 850°C) the prepared contacts showed Schottky behavior with large scatter of parameters. Afterannealing at approx. 960 °C, where the onset of ohmic behavior is expected, the structures were truly ohmic and of good parameters. Cleaning methods had just a negligible influence on the electrical parameters of the ohmic contacts. An e

Název v anglickém jazyce

Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation

Popis výsledku anglicky

This work is dealing with the influence of surface treatment on ohmic contacts to hexagonal N-type SiC with medium doping level. The contact materials were Ni and Ni2Si. The structures had to be annealed at high temperatures in order to reach ohmic behavior. A number of surface treatment methods were tested: wet cleaning, plasma etching, intentional oxidation with etching, H2 annealing and their combinations. After some types of cleaning, the SiC surface was immediately analysed using the XPS method. The results of the analyses showed that the composition of the surface was not much influenced by these treatments. At lower annealing temperatures (approx. up to 850°C) the prepared contacts showed Schottky behavior with large scatter of parameters. Afterannealing at approx. 960 °C, where the onset of ohmic behavior is expected, the structures were truly ohmic and of good parameters. Cleaning methods had just a negligible influence on the electrical parameters of the ohmic contacts. An e

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

—

Svazek periodika

88

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

553-556

Kód UT WoS článku

000289137600006

EID výsledku v databázi Scopus

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