Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43896497" target="_blank" >RIV/60461373:22310/13:43896497 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.797" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.797</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.797" target="_blank" >10.4028/www.scientific.net/MSF.740-742.797</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability

Popis výsledku v původním jazyce

A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic contacts were prepared and tested at 300 degrees C on air for hundreds of hours. NiSi2 and Si have showed high thermal stability. Moreover, also the so called secondary contacts have showed good electrical and structural properties in the test. The secondary ohmic contacts have been formed from the original ohmic contacts after they were etched off and replaced. Secondary ohmic contacts originate in a certain surface modification of the SiC substrate created during high temperature annealing of the original contact. All applied contact materials enable formation of quality secondary contacts which is especially noteworthy at NiSi2 and Si. The results bring new SiC device design perspectives with the application of the secondary ohmic contacts. For example, the contact is designed so that the primary contact attains as good ohmic behavior as possible w

Název v anglickém jazyce

Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability

Popis výsledku anglicky

A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic contacts were prepared and tested at 300 degrees C on air for hundreds of hours. NiSi2 and Si have showed high thermal stability. Moreover, also the so called secondary contacts have showed good electrical and structural properties in the test. The secondary ohmic contacts have been formed from the original ohmic contacts after they were etched off and replaced. Secondary ohmic contacts originate in a certain surface modification of the SiC substrate created during high temperature annealing of the original contact. All applied contact materials enable formation of quality secondary contacts which is especially noteworthy at NiSi2 and Si. The results bring new SiC device design perspectives with the application of the secondary ohmic contacts. For example, the contact is designed so that the primary contact attains as good ohmic behavior as possible w

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Mater. Sci. Forum

ISSN

0255-5476

e-ISSN

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Svazek periodika

740-742

Číslo periodika v rámci svazku

JANUARY 2013

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

4

Strana od-do

797-800

Kód UT WoS článku

000319785500189

EID výsledku v databázi Scopus

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