Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894328" target="_blank" >RIV/60461373:22310/12:43894328 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/60461373:22810/12:43894328
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.tsf.2012.02.008" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2012.02.008</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2012.02.008" target="_blank" >10.1016/j.tsf.2012.02.008</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC
Popis výsledku v původním jazyce
Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H- and 6H-SiC(0001) by deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature annealing, as well as pure Ni contacts. After annealing, the individual contacts were analyzed by Raman spectroscopy and electrical property measurements. Contact structures were then etched-off and subsequently observed by means of AFM (Atomic Force Microscopy). Ni reacted with SiC, forming Ni2Si and carbon. At NixSiy/SiC contact structures the respective suicides were already formed at low annealing temperatures, when only Schottky behavior of the structures was observed. The intended silicides, once formed, did not change any further with increasing annealing temperature. All contact structures provided good ohmic behavior after being annealed at 960 degrees C. By means of combined AFM and Raman analysis of the etched-off contacts we found that the silicide contact structures very probably did not react with SiC whi
Název v anglickém jazyce
Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC
Popis výsledku anglicky
Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H- and 6H-SiC(0001) by deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature annealing, as well as pure Ni contacts. After annealing, the individual contacts were analyzed by Raman spectroscopy and electrical property measurements. Contact structures were then etched-off and subsequently observed by means of AFM (Atomic Force Microscopy). Ni reacted with SiC, forming Ni2Si and carbon. At NixSiy/SiC contact structures the respective suicides were already formed at low annealing temperatures, when only Schottky behavior of the structures was observed. The intended silicides, once formed, did not change any further with increasing annealing temperature. All contact structures provided good ohmic behavior after being annealed at 960 degrees C. By means of combined AFM and Raman analysis of the etched-off contacts we found that the silicide contact structures very probably did not react with SiC whi
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
JJ - Ostatní materiály
OECD FORD obor
—
Návaznosti výsledku
Projekt
<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Thin Solid Films
ISSN
0040-6090
e-ISSN
—
Svazek periodika
520
Číslo periodika v rámci svazku
13
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
11
Strana od-do
4378-4388
Kód UT WoS článku
000303084200026
EID výsledku v databázi Scopus
—