Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892465" target="_blank" >RIV/60461373:22310/11:43892465 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level

Popis výsledku v původním jazyce

Ni suicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structure were ohmic with low contact resistivity approximately 8 x 10(-4) Omega cm(2) after annealing at 960 degrees C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070 degrees C to see ohmic behavior appearing with resistivities reaching 8 x 10(-3) Omega cm(2) and this was valid only for Ni end Ni(2)Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is e

Název v anglickém jazyce

Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level

Popis výsledku anglicky

Ni suicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structure were ohmic with low contact resistivity approximately 8 x 10(-4) Omega cm(2) after annealing at 960 degrees C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070 degrees C to see ohmic behavior appearing with resistivities reaching 8 x 10(-3) Omega cm(2) and this was valid only for Ni end Ni(2)Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is e

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radioengineering

ISSN

1210-2512

e-ISSN

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Svazek periodika

20

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

5

Strana od-do

209-213

Kód UT WoS článku

000289657400006

EID výsledku v databázi Scopus

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