Thermal degradation of Ni-based Schottky contacts on 6H-SiC

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892440" target="_blank" >RIV/60461373:22310/11:43892440 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22810/11:43892440

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2010.12.077" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2010.12.077</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2010.12.077" target="_blank" >10.1016/j.apsusc.2010.12.077</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermal degradation of Ni-based Schottky contacts on 6H-SiC

Popis výsledku v původním jazyce

We prepared Ni and Ni(2)Si Schottky contacts on lightly doped (5.5 x 10(15) cm(-3)) n-type 6H-SiC and evaluated their thermal degradation after annealing in the temperature range of 750-1150 degrees C. Ni contacts had Schottky behavior after annealing at750 and 850 degrees C; they gradually degraded at 960 and 1065 degrees C, and achieved ohmic behavior at 1150 degrees C. Ni(2)Si contacts had higher values of saturation current density and lower Schottky barrier heights than Ni contacts after annealingat 750 and 850 degrees C, and an abrupt transition from Schottky behavior at 850 degrees C to ohmic behavior at 960 degrees C. We assume that the abrupt transition from Schottky to ohmic behavior in the case of Ni(2)Si metallization is caused by its lowreactivity with silicon carbide, which was verified by XPS depth profiling. The results indicate that the discrepancy in the behavior of Ni contacts on lightly doped SiC reported in the literature might have been caused by non-equal proc

Název v anglickém jazyce

Thermal degradation of Ni-based Schottky contacts on 6H-SiC

Popis výsledku anglicky

We prepared Ni and Ni(2)Si Schottky contacts on lightly doped (5.5 x 10(15) cm(-3)) n-type 6H-SiC and evaluated their thermal degradation after annealing in the temperature range of 750-1150 degrees C. Ni contacts had Schottky behavior after annealing at750 and 850 degrees C; they gradually degraded at 960 and 1065 degrees C, and achieved ohmic behavior at 1150 degrees C. Ni(2)Si contacts had higher values of saturation current density and lower Schottky barrier heights than Ni contacts after annealingat 750 and 850 degrees C, and an abrupt transition from Schottky behavior at 850 degrees C to ohmic behavior at 960 degrees C. We assume that the abrupt transition from Schottky to ohmic behavior in the case of Ni(2)Si metallization is caused by its lowreactivity with silicon carbide, which was verified by XPS depth profiling. The results indicate that the discrepancy in the behavior of Ni contacts on lightly doped SiC reported in the literature might have been caused by non-equal proc

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

257

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

4418-4421

Kód UT WoS článku

000286459600100

EID výsledku v databázi Scopus

—