Si ohmic contacts on N-type SiC studied by XPS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43895685" target="_blank" >RIV/60461373:22310/13:43895685 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22810/13:43895685

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.mee.2012.12.019" target="_blank" >http://dx.doi.org/10.1016/j.mee.2012.12.019</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mee.2012.12.019" target="_blank" >10.1016/j.mee.2012.12.019</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Si ohmic contacts on N-type SiC studied by XPS

Popis výsledku v původním jazyce

Si ohmic contacts on N-type 4H- and 6H-SiC with contact resistivity comparable with Ni metallizations were prepared. After etching-off of the Si contacts and deposition of new, unannealed ones, good electrical parameters of the original contacts remain preserved. Such unannealed secondary contacts were already successfully created with original Ni or Ni silicide metallizations. An advantage offered by the secondary contacts prepared after the original Si contacts is that they are prepared on a high-quality SiC surface as the original Si does not react with SiC. XPS and AFM analyses were carried out. Under the original Si contacts when they are etched-off there is observed a shift of Si and C peaks to higher binding energies in comparison with a clean,bare SiC surface. After less than 2 nm of the surface layer is sputtered-off the shift disappears. We suggest that preserved electrical parameters after the etching-off of the Si contacts stem from a SiC surface modification.

Název v anglickém jazyce

Si ohmic contacts on N-type SiC studied by XPS

Popis výsledku anglicky

Si ohmic contacts on N-type 4H- and 6H-SiC with contact resistivity comparable with Ni metallizations were prepared. After etching-off of the Si contacts and deposition of new, unannealed ones, good electrical parameters of the original contacts remain preserved. Such unannealed secondary contacts were already successfully created with original Ni or Ni silicide metallizations. An advantage offered by the secondary contacts prepared after the original Si contacts is that they are prepared on a high-quality SiC surface as the original Si does not react with SiC. XPS and AFM analyses were carried out. Under the original Si contacts when they are etched-off there is observed a shift of Si and C peaks to higher binding energies in comparison with a clean,bare SiC surface. After less than 2 nm of the surface layer is sputtered-off the shift disappears. We suggest that preserved electrical parameters after the etching-off of the Si contacts stem from a SiC surface modification.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

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Svazek periodika

106

Číslo periodika v rámci svazku

JUN 2013

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

132-138

Kód UT WoS článku

000319545500026

EID výsledku v databázi Scopus

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