Epitaxial graphene on 4H-SiC

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894446" target="_blank" >RIV/60461373:22310/12:43894446 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/60461373:22810/12:43894446
Výsledek na webu
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Jazyk výsledku
angličtina
Název v původním jazyce
Epitaxial graphene on 4H-SiC
Popis výsledku v původním jazyce
In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layerswere analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis.
Název v anglickém jazyce
Epitaxial graphene on 4H-SiC
Popis výsledku anglicky
In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layerswere analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis.

Projekt
<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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