Reduction of skin effect losses in double-level-T-gate structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43897455" target="_blank" >RIV/60461373:22310/14:43897455 - isvavai.cz</a>

Výsledek na webu

<a href="http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468" target="_blank" >http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4903468" target="_blank" >10.1063/1.4903468</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Reduction of skin effect losses in double-level-T-gate structure

Popis výsledku v původním jazyce

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L-g = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 mu mgate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f(max) value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

Název v anglickém jazyce

Reduction of skin effect losses in double-level-T-gate structure

Popis výsledku anglicky

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L-g = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 mu mgate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f(max) value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GA13-20507S" target="_blank" >GA13-20507S: Tenké vrstvy magneticky dopovaného GaN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

105

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

1

Strana od-do

32102

Kód UT WoS článku

000346266000044

EID výsledku v databázi Scopus

—