Graphene growth by transfer-free CVD metod using cobalt/nickel catalyst layer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43917069" target="_blank" >RIV/60461373:22310/18:43917069 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.919.207" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.919.207</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.919.207" target="_blank" >10.4028/www.scientific.net/MSF.919.207</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene growth by transfer-free CVD metod using cobalt/nickel catalyst layer

Popis výsledku v původním jazyce

Graphene has been long considered for application in electronics manufacturing due to its extraordinary electronic, mechanical and thermal properties. This paper focuses on the graphene preparation onto dielectric substrate using transfer-free chemical vapour deposition (CVD) method with an intermediate catalytic metal layer (cobalt, nickel). Graphene layers were formed via segregation mechanism at temperatures in the range of 850 - 1050 °C onto the metal-dielectric boundary. Evaluated Raman spectra, which reveal the number of graphene layers and their defectivity suggested, that thinner metal layer and balanced ratio of H2:CH4 yield the best results for both cobalt and nickel layer. Spectra showed low amount of defects and the average number of carbon layers between 2-3, however, single-layer graphene (SLG) samples were also prepared. Scanning electron microscopy images showed that graphene domains on larger scale are not fully continuous.

Název v anglickém jazyce

Graphene growth by transfer-free CVD metod using cobalt/nickel catalyst layer

Popis výsledku anglicky

Graphene has been long considered for application in electronics manufacturing due to its extraordinary electronic, mechanical and thermal properties. This paper focuses on the graphene preparation onto dielectric substrate using transfer-free chemical vapour deposition (CVD) method with an intermediate catalytic metal layer (cobalt, nickel). Graphene layers were formed via segregation mechanism at temperatures in the range of 850 - 1050 °C onto the metal-dielectric boundary. Evaluated Raman spectra, which reveal the number of graphene layers and their defectivity suggested, that thinner metal layer and balanced ratio of H2:CH4 yield the best results for both cobalt and nickel layer. Spectra showed low amount of defects and the average number of carbon layers between 2-3, however, single-layer graphene (SLG) samples were also prepared. Scanning electron microscopy images showed that graphene domains on larger scale are not fully continuous.

Druh

J_ost - Ostatní články v recenzovaných periodicích

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA17-00607S" target="_blank" >GA17-00607S: Komplexní umělé elektromagnetické struktury a nanostruktury</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science Forum

ISSN

0255-5476

e-ISSN

—

Svazek periodika

919

Číslo periodika v rámci svazku

January

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

8

Strana od-do

207-214

Kód UT WoS článku

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EID výsledku v databázi Scopus

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