Next-Generation Self-Powered Photodetectors using 2D Bismuth Oxide Selenide Crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F24%3A43931486" target="_blank" >RIV/60461373:22310/24:43931486 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/full/10.1021/acsanm.4c03594" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acsanm.4c03594</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsanm.4c03594" target="_blank" >10.1021/acsanm.4c03594</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Next-Generation Self-Powered Photodetectors using 2D Bismuth Oxide Selenide Crystals

Popis výsledku v původním jazyce

The concept of self-powered photodetectors has attracted significant attention due to their versatile applications in areas such as intelligent systems and hazardous substance detection. Among these, p-n junction and Schottky junction photodetectors are the most widely studied types; however, their fabrication processes are often complex and costly. To overcome these challenges, we focused on the emerging self-powered, ultrasensitive photodetector platform based on photoelectrochemical (PEC) principles. This platform leverages the unique properties of the emerging material bismuth oxide selenide (Bi2O2Se), which features a wide bandgap (∼2 eV) and a high absorption coefficient. We utilized chemical exfoliation to obtain thin layers of Bi2O2Se, enabling highly efficient photodetection. The device characterization demonstrated impressive performance metrics, including a responsivity of 97.1 μA W-1 and a specific detectivity of 2 × 108 cm Hz 1/2 W-1. The PEC photodetector also exhibits broad-spectrum sensitivity, from blue to infrared wavelengths, and features an ultrafast response time of ∼82 ms and a recovery time of ∼86 ms, highlighting its practical potential. Moreover, these self-powered photodetectors show excellent stability in electrochemical environments, positioning them promising candidates for integration into future high-efficiency devices. © 2024 The Authors. Published by American Chemical Society.

Název v anglickém jazyce

Next-Generation Self-Powered Photodetectors using 2D Bismuth Oxide Selenide Crystals

Popis výsledku anglicky

The concept of self-powered photodetectors has attracted significant attention due to their versatile applications in areas such as intelligent systems and hazardous substance detection. Among these, p-n junction and Schottky junction photodetectors are the most widely studied types; however, their fabrication processes are often complex and costly. To overcome these challenges, we focused on the emerging self-powered, ultrasensitive photodetector platform based on photoelectrochemical (PEC) principles. This platform leverages the unique properties of the emerging material bismuth oxide selenide (Bi2O2Se), which features a wide bandgap (∼2 eV) and a high absorption coefficient. We utilized chemical exfoliation to obtain thin layers of Bi2O2Se, enabling highly efficient photodetection. The device characterization demonstrated impressive performance metrics, including a responsivity of 97.1 μA W-1 and a specific detectivity of 2 × 108 cm Hz 1/2 W-1. The PEC photodetector also exhibits broad-spectrum sensitivity, from blue to infrared wavelengths, and features an ultrafast response time of ∼82 ms and a recovery time of ∼86 ms, highlighting its practical potential. Moreover, these self-powered photodetectors show excellent stability in electrochemical environments, positioning them promising candidates for integration into future high-efficiency devices. © 2024 The Authors. Published by American Chemical Society.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Nano Materials

ISSN

2574-0970

e-ISSN

2574-0970

Svazek periodika

7

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

24377-24387

Kód UT WoS článku

001340155100001

EID výsledku v databázi Scopus

2-s2.0-85207583435