Giant nonlinear transport response in a magnetic semiconductor induced by electrostatic gating

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43933828" target="_blank" >RIV/60461373:22310/25:43933828 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2950636025003238?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2950636025003238?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.newton.2025.100331" target="_blank" >10.1016/j.newton.2025.100331</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Giant nonlinear transport response in a magnetic semiconductor induced by electrostatic gating

Popis výsledku v původním jazyce

Nonreciprocal and nonlinear transport responses enable key functionalities for energy harvesting, frequency mixing, and magnetic-state detection. Traditionally, nonlinear conduction has been observed in non-centrosymmetric crystals or in ferromagnet/heavy-metal heterostructures. Here, we demonstrate a new mechanism for generating strong nonlinear transport in chromium sulfide bromide (CrSBr), a magnetic semiconductor with a centrosymmetric crystal structure. Instead of relying on a crystal lattice or heterostructure to break the requisite symmetries that prohibit nonlinear transport, we directly utilize gate voltage to induce an asymmetric band structure in the magnetic semiconductor through Rashba spin-orbit coupling (SOC), resulting in intrinsic transport nonreciprocity and nonlinearity. Remarkably, the strength of the observed nonlinearity exceeds typical magnetic heterostructure values by several orders of magnitude. Furthermore, the nonlinear transport demonstrates a high tunability with the applied gate voltage, explained by a minimalistic two-band model. These findings establish magnetic semiconductors as powerful platforms for exploring the interplay between SOC and magnetism and for advancing our understanding of nonreciprocal electronic transport. © 2025 The Author(s)

Název v anglickém jazyce

Giant nonlinear transport response in a magnetic semiconductor induced by electrostatic gating

Popis výsledku anglicky

Nonreciprocal and nonlinear transport responses enable key functionalities for energy harvesting, frequency mixing, and magnetic-state detection. Traditionally, nonlinear conduction has been observed in non-centrosymmetric crystals or in ferromagnet/heavy-metal heterostructures. Here, we demonstrate a new mechanism for generating strong nonlinear transport in chromium sulfide bromide (CrSBr), a magnetic semiconductor with a centrosymmetric crystal structure. Instead of relying on a crystal lattice or heterostructure to break the requisite symmetries that prohibit nonlinear transport, we directly utilize gate voltage to induce an asymmetric band structure in the magnetic semiconductor through Rashba spin-orbit coupling (SOC), resulting in intrinsic transport nonreciprocity and nonlinearity. Remarkably, the strength of the observed nonlinearity exceeds typical magnetic heterostructure values by several orders of magnitude. Furthermore, the nonlinear transport demonstrates a high tunability with the applied gate voltage, explained by a minimalistic two-band model. These findings establish magnetic semiconductors as powerful platforms for exploring the interplay between SOC and magnetism and for advancing our understanding of nonreciprocal electronic transport. © 2025 The Author(s)

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Newton

ISSN

2950-6360

e-ISSN

2950-6360

Svazek periodika

2

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

100331

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-105024735594