Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Isotopically Engineered Graphene Systems
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F15%3A00446586" target="_blank" >RIV/61388955:_____/15:00446586 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1021/ar500384p" target="_blank" >http://dx.doi.org/10.1021/ar500384p</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/ar500384p" target="_blank" >10.1021/ar500384p</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Isotopically Engineered Graphene Systems
Popis výsledku v původním jazyce
CONSPECTUS: The special properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset that extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, that is, doping, represents a viable way of shifting the Fermi level. In particular, electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in situ Raman spectroscopy, that is, in situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy not only can readily monitor the changes in the doping level but also can
Název v anglickém jazyce
Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Isotopically Engineered Graphene Systems
Popis výsledku anglicky
CONSPECTUS: The special properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset that extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, that is, doping, represents a viable way of shifting the Fermi level. In particular, electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in situ Raman spectroscopy, that is, in situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy not only can readily monitor the changes in the doping level but also can
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
CG - Elektrochemie
OECD FORD obor
—
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2015
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Accounts of Chemical Research
ISSN
0001-4842
e-ISSN
—
Svazek periodika
48
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
8
Strana od-do
111-118
Kód UT WoS článku
000348333900014
EID výsledku v databázi Scopus
2-s2.0-84921416140