Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F22%3A00559108" target="_blank" >RIV/61388955:_____/22:00559108 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0332528" target="_blank" >https://hdl.handle.net/11104/0332528</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.microc.2022.107739" target="_blank" >10.1016/j.microc.2022.107739</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping

Popis výsledku v původním jazyce

Effective charge doping and control of the Fermi level shift is a crucial aspect in graphene device fabrication. Raman spectroscopy is extensively used for primary characterization of such samples, however, quantification of carrier concentration using the known G-2D vector analysis can pose problems when more sources of phonon renormalization are present, for example lattice deformation or disorder. In such cases, analysis of another Raman mode can provide the needed missing information. In this study, chemical vapor-deposition-grown single-layer graphene was monitored by in-situ Raman spectroelectrochemistry with the focus on the behavior of the 2D’ mode upon the application of electrochemical potential. We analyzed the changes of the Raman peak intensity, frequency and linewidth of the 2D’ mode as a function of electrode potential in detail and compared the obtained results with well-known behavior of the G and 2D modes during electrochemical doping.

Název v anglickém jazyce

Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping

Popis výsledku anglicky

Effective charge doping and control of the Fermi level shift is a crucial aspect in graphene device fabrication. Raman spectroscopy is extensively used for primary characterization of such samples, however, quantification of carrier concentration using the known G-2D vector analysis can pose problems when more sources of phonon renormalization are present, for example lattice deformation or disorder. In such cases, analysis of another Raman mode can provide the needed missing information. In this study, chemical vapor-deposition-grown single-layer graphene was monitored by in-situ Raman spectroelectrochemistry with the focus on the behavior of the 2D’ mode upon the application of electrochemical potential. We analyzed the changes of the Raman peak intensity, frequency and linewidth of the 2D’ mode as a function of electrode potential in detail and compared the obtained results with well-known behavior of the G and 2D modes during electrochemical doping.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microchemical Journal

ISSN

0026-265X

e-ISSN

1095-9149

Svazek periodika

181

Číslo periodika v rámci svazku

OCT 2022

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

107739

Kód UT WoS článku

000826538200003

EID výsledku v databázi Scopus

2-s2.0-85133275203