Strain Assessment in Graphene Through the Raman 2D Mode

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F15%3A00451435" target="_blank" >RIV/61388955:_____/15:00451435 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acs.jpcc.5b09643" target="_blank" >http://dx.doi.org/10.1021/acs.jpcc.5b09643</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.5b09643" target="_blank" >10.1021/acs.jpcc.5b09643</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strain Assessment in Graphene Through the Raman 2D Mode

Popis výsledku v původním jazyce

Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two bands might be biased, especially under uniaxial strain, by the effects of charge-transfer doping. Therefore, it is extremely desirable to use another Raman band, less affected by doping, but with a defined and measurable behavior under strain. The Raman 2D mode is in this sense the ideal feature for the evaluation of strain levels in stretched graphene monolayers, suitable for this task even under different experimental conditions. The sensitivity and accuracy of the approach through 2D mode is on the same level as through the G mode; however, the clear advantage of the 2D arises when doping effects are present in the sample.

Název v anglickém jazyce

Strain Assessment in Graphene Through the Raman 2D Mode

Popis výsledku anglicky

Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two bands might be biased, especially under uniaxial strain, by the effects of charge-transfer doping. Therefore, it is extremely desirable to use another Raman band, less affected by doping, but with a defined and measurable behavior under strain. The Raman 2D mode is in this sense the ideal feature for the evaluation of strain levels in stretched graphene monolayers, suitable for this task even under different experimental conditions. The sensitivity and accuracy of the approach through 2D mode is on the same level as through the G mode; however, the clear advantage of the 2D arises when doping effects are present in the sample.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

—

Svazek periodika

119

Číslo periodika v rámci svazku

45

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

25651-25656

Kód UT WoS článku

000364796300056

EID výsledku v databázi Scopus

2-s2.0-84946887554