Local Photovoltaic Properties of Graphene-Silicon Heterojunctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F18%3A00498933" target="_blank" >RIV/61388955:_____/18:00498933 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00498933 RIV/00216208:11310/18:10385685

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssb.201800305" target="_blank" >http://dx.doi.org/10.1002/pssb.201800305</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201800305" target="_blank" >10.1002/pssb.201800305</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Local Photovoltaic Properties of Graphene-Silicon Heterojunctions

Popis výsledku v původním jazyce

Interfacing of materials with different dimensionalities becomes increasingly relevant for many applications which can utilize the exceptional properties of low-dimensional materials on one hand, and build-up on the existing production know-how for bulk (3D) materials on the other. Numerous appealing possibilities are offered by such combinations. In this work, the authors focus on 2D-3D heterostructures composed of mechanically exfoliated single- and few-layer layer graphene (Gr) coupled to freshly etched n-doped silicon. Two ways of characterizing the photovoltaic (PV) properties of such junctions by Conductive Atomic Force Miscroscopy (C-AFM) under illumination are shown: 1) by measuring the I-V curves directly at selected points, while the flakes are scanned in intermittent mode and 2) by scanning the samples in contact mode at different bias voltages, followed by reconstruction of I-V curves using mean photocurrent quantified in selected areas. The direct I-V curves measurement has been employed to discriminate the effect of increased p-doping of the graphene layer, and the contact mode has been utilized to evaluate the separation between the graphene flake and the substrate. Additionally, pros and cons of the two routes are briefly discussed and outlook for further advanced nanoscale characterization of such junctions is proposed.

Název v anglickém jazyce

Local Photovoltaic Properties of Graphene-Silicon Heterojunctions

Popis výsledku anglicky

Interfacing of materials with different dimensionalities becomes increasingly relevant for many applications which can utilize the exceptional properties of low-dimensional materials on one hand, and build-up on the existing production know-how for bulk (3D) materials on the other. Numerous appealing possibilities are offered by such combinations. In this work, the authors focus on 2D-3D heterostructures composed of mechanically exfoliated single- and few-layer layer graphene (Gr) coupled to freshly etched n-doped silicon. Two ways of characterizing the photovoltaic (PV) properties of such junctions by Conductive Atomic Force Miscroscopy (C-AFM) under illumination are shown: 1) by measuring the I-V curves directly at selected points, while the flakes are scanned in intermittent mode and 2) by scanning the samples in contact mode at different bias voltages, followed by reconstruction of I-V curves using mean photocurrent quantified in selected areas. The direct I-V curves measurement has been employed to discriminate the effect of increased p-doping of the graphene layer, and the contact mode has been utilized to evaluate the separation between the graphene flake and the substrate. Additionally, pros and cons of the two routes are briefly discussed and outlook for further advanced nanoscale characterization of such junctions is proposed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Svazek periodika

255

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000453382600003

EID výsledku v databázi Scopus

2-s2.0-85053693163