Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F22%3A00560529" target="_blank" >RIV/61388955:_____/22:00560529 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0333444" target="_blank" >https://hdl.handle.net/11104/0333444</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41699-022-00329-1" target="_blank" >10.1038/s41699-022-00329-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale

Popis výsledku v původním jazyce

The integration of 2D materials into future applications relies on advances in their quality and production. We here report a synthesis method that achieves ultrahigh optoelectronic performance at unprecedented fabrication scales. A mediator-assisted chemical vapor deposition process yields tungsten-disulfide (WS2) with near-unity photoluminescence quantum yield, superior photosensitivity and improved environmental stability. This enhancement is due to the decrease in the density of lattice defects and charge traps brought about by the self-regulating nature of the growth process. This robustness in the presence of precursor variability enables the high-throughput growth in atomically confined stacks and achieves uniform synthesis of single-layer WS2 on dozens of closely packed wafers. Our approach enhances the scientific and commercial potential of 2D materials as demonstrated in producing large-scale arrays of record-breaking optoelectronic devices.

Název v anglickém jazyce

Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale

Popis výsledku anglicky

The integration of 2D materials into future applications relies on advances in their quality and production. We here report a synthesis method that achieves ultrahigh optoelectronic performance at unprecedented fabrication scales. A mediator-assisted chemical vapor deposition process yields tungsten-disulfide (WS2) with near-unity photoluminescence quantum yield, superior photosensitivity and improved environmental stability. This enhancement is due to the decrease in the density of lattice defects and charge traps brought about by the self-regulating nature of the growth process. This robustness in the presence of precursor variability enables the high-throughput growth in atomically confined stacks and achieves uniform synthesis of single-layer WS2 on dozens of closely packed wafers. Our approach enhances the scientific and commercial potential of 2D materials as demonstrated in producing large-scale arrays of record-breaking optoelectronic devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/GX20-08633X" target="_blank" >GX20-08633X: ÅrchitektRonika dvoudimenzionálních krystalů se synergií chirálních elektrochemických a optoelektronických konceptů na Å- škále</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

NPJ 2D MATER APPL

ISSN

2397-7132

e-ISSN

2397-7132

Svazek periodika

6

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

54

Kód UT WoS článku

000841230000001

EID výsledku v databázi Scopus

2-s2.0-85136154299