Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F19%3A00511937" target="_blank" >RIV/61388963:_____/19:00511937 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/19:10405407

Výsledek na webu

<a href="https://www.tandfonline.com/doi/full/10.1080/05704928.2018.1517263" target="_blank" >https://www.tandfonline.com/doi/full/10.1080/05704928.2018.1517263</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1080/05704928.2018.1517263" target="_blank" >10.1080/05704928.2018.1517263</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures

Popis výsledku v původním jazyce

The treatment of time-resolved (TR) photoluminescence (PL) decay kinetics is analysed in details and illustrated by experiments on semiconductor quantum dots, namely silicon nanocrystals (Si NCs). We consider the mono-, stretch- and multi-exponential as well as lognormal (LN) and some complex decay models for continuous and discrete distribution of rates (lifetimes). A particular attention is devoted to the thorough analysis of non-exponential decay kinetics. We explicitly show that a LN distribution of emitter sizes may results in LN distribution of decay rates. On the other hand, the distribution of rates cannot be, strictly speaking, Levy stable distribution (that results in the stretched-exponential decay). We introduce theoretical background and derive expressions to calculate the average decay lifetimes for some common decays with practical examples of their applications. Experimental aspects are discussed with special attention devoted to the major problems of the accurate TR PL data treatment, including background uncertainty, pulse duration, system response function etc. Finally, a thorough literature survey of TR PL in Si NCs is given. The methods and definitions outlined in this systematic review are applicable to various other material systems with slow decay like rare-earth and transition metal-doped materials, amorphous semiconductors, type-II heterostructures, singlet oxygen phosphorescence etc.

Název v anglickém jazyce

Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures

Popis výsledku anglicky

The treatment of time-resolved (TR) photoluminescence (PL) decay kinetics is analysed in details and illustrated by experiments on semiconductor quantum dots, namely silicon nanocrystals (Si NCs). We consider the mono-, stretch- and multi-exponential as well as lognormal (LN) and some complex decay models for continuous and discrete distribution of rates (lifetimes). A particular attention is devoted to the thorough analysis of non-exponential decay kinetics. We explicitly show that a LN distribution of emitter sizes may results in LN distribution of decay rates. On the other hand, the distribution of rates cannot be, strictly speaking, Levy stable distribution (that results in the stretched-exponential decay). We introduce theoretical background and derive expressions to calculate the average decay lifetimes for some common decays with practical examples of their applications. Experimental aspects are discussed with special attention devoted to the major problems of the accurate TR PL data treatment, including background uncertainty, pulse duration, system response function etc. Finally, a thorough literature survey of TR PL in Si NCs is given. The methods and definitions outlined in this systematic review are applicable to various other material systems with slow decay like rare-earth and transition metal-doped materials, amorphous semiconductors, type-II heterostructures, singlet oxygen phosphorescence etc.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Spectroscopy Reviews

ISSN

0570-4928

e-ISSN

—

Svazek periodika

54

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

44

Strana od-do

758-801

Kód UT WoS článku

000495765000003

EID výsledku v databázi Scopus

2-s2.0-85065985524