Acid vapor-induced enhanced electrical current rectification in phenothiazine-based electronic devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F25%3A00639802" target="_blank" >RIV/61388963:_____/25:00639802 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1039/D5SC03848K" target="_blank" >https://doi.org/10.1039/D5SC03848K</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d5sc03848k" target="_blank" >10.1039/d5sc03848k</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Acid vapor-induced enhanced electrical current rectification in phenothiazine-based electronic devices

Popis výsledku v původním jazyce

Engineering transformable electronic features in two-terminal molecular junctions is of significant interest for advancing molecular-scale electronics. We demonstrate external stimuli (acid vapor)-responsive enhanced electrical current rectification (so called diode) in phenothiazine-based (R1) vertically stacked molecular junctions (MJs) with a configuration of p+-Si/R158 nm/ITO. The fabricated junctions exhibit nearly 530% enhancement in the electrical current rectification ratio (RR) in response to acid-vapor exposure for 60 seconds. The electronic functions of the devices can be partially set back using triethylamine (a weak base) vapor. Exposure to acid vapor forms cation radicals, (R1(center dot)+)H+, that bring the lowest unoccupied molecular orbital (LUMO) closer to the Fermi level (EF) of the ITO electrode in forward bias. In contrast, alignment of the highest occupied molecular orbital (HOMO) is not favorable under reverse bias conditions, which causes the emergence of the rectification ratio in the acid-exposed MJs. Electrical impedance spectra reveal a high charge transfer resistance (Rct) of about 6 M Omega in pristine MJs, behaving like a resistor. However, the acid vapor facilitates an enhanced current flow at the forward bias compared to that at the reverse bias, mimicking diode functionality. The molecular junctions scrutinized for alternating current (AC) to direct current (DC) conversion using a function generator exhibit optimal diode performance at 500 Hz. Our findings demonstrate a method for high-yield device fabrication (similar to 86% working devices) that can be utilized for acid- and base-vapor-facilitated transformable electronic functions mimicking traditional electronics.

Název v anglickém jazyce

Acid vapor-induced enhanced electrical current rectification in phenothiazine-based electronic devices

Popis výsledku anglicky

Engineering transformable electronic features in two-terminal molecular junctions is of significant interest for advancing molecular-scale electronics. We demonstrate external stimuli (acid vapor)-responsive enhanced electrical current rectification (so called diode) in phenothiazine-based (R1) vertically stacked molecular junctions (MJs) with a configuration of p+-Si/R158 nm/ITO. The fabricated junctions exhibit nearly 530% enhancement in the electrical current rectification ratio (RR) in response to acid-vapor exposure for 60 seconds. The electronic functions of the devices can be partially set back using triethylamine (a weak base) vapor. Exposure to acid vapor forms cation radicals, (R1(center dot)+)H+, that bring the lowest unoccupied molecular orbital (LUMO) closer to the Fermi level (EF) of the ITO electrode in forward bias. In contrast, alignment of the highest occupied molecular orbital (HOMO) is not favorable under reverse bias conditions, which causes the emergence of the rectification ratio in the acid-exposed MJs. Electrical impedance spectra reveal a high charge transfer resistance (Rct) of about 6 M Omega in pristine MJs, behaving like a resistor. However, the acid vapor facilitates an enhanced current flow at the forward bias compared to that at the reverse bias, mimicking diode functionality. The molecular junctions scrutinized for alternating current (AC) to direct current (DC) conversion using a function generator exhibit optimal diode performance at 500 Hz. Our findings demonstrate a method for high-yield device fabrication (similar to 86% working devices) that can be utilized for acid- and base-vapor-facilitated transformable electronic functions mimicking traditional electronics.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemical Science

ISSN

2041-6520

e-ISSN

2041-6539

Svazek periodika

16

Číslo periodika v rámci svazku

39

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

18190-18200

Kód UT WoS článku

001568159200001

EID výsledku v databázi Scopus

2-s2.0-105018075904