Study of Er+ ion-implanted lithium niobate structure after an annealing procedure by RBS and RBS/channelling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F10%3A00343535" target="_blank" >RIV/61389005:_____/10:00343535 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/10:00022986 RIV/44555601:13440/10:00005553

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Study of Er+ ion-implanted lithium niobate structure after an annealing procedure by RBS and RBS/channelling

Popis výsledku v původním jazyce

Erbium-doped lithium niobate (Er:LiNbO3) is a prospective photonics component, operating at = 1.5 lm, which could be used as an optical amplifier or waveguide laser. We have focused on the structure of Er:LiNbO3 layers created by 330 keV erbium ion implantation (fluences 1,0x1015, 2,5x1015and 1,0x1016 cm-2) in the X, Z and two various Y crystallographic cuts of LiNbO3. Five hours annealing at 350°C was applied to recrystallize the as-implanted layer and to avoid clustering of Er. Depth distribution of implanted Er has been measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. Defects distribution and structural changes have been described using the RBS/channelling method. Data obtained made it possible to reveal the relations between the crystallographic orientation of the implanted crystal and the behaviour during the restoration process. The deepest modified layer has been observed in the perpendicular Y cut, which also exhibits the lowest reconstruction afte

Název v anglickém jazyce

Study of Er+ ion-implanted lithium niobate structure after an annealing procedure by RBS and RBS/channelling

Popis výsledku anglicky

Erbium-doped lithium niobate (Er:LiNbO3) is a prospective photonics component, operating at = 1.5 lm, which could be used as an optical amplifier or waveguide laser. We have focused on the structure of Er:LiNbO3 layers created by 330 keV erbium ion implantation (fluences 1,0x1015, 2,5x1015and 1,0x1016 cm-2) in the X, Z and two various Y crystallographic cuts of LiNbO3. Five hours annealing at 350°C was applied to recrystallize the as-implanted layer and to avoid clustering of Er. Depth distribution of implanted Er has been measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. Defects distribution and structural changes have been described using the RBS/channelling method. Data obtained made it possible to reveal the relations between the crystallographic orientation of the implanted crystal and the behaviour during the restoration process. The deepest modified layer has been observed in the perpendicular Y cut, which also exhibits the lowest reconstruction afte

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

268

Číslo periodika v rámci svazku

11-12

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

—

Kód UT WoS článku

000278702300076

EID výsledku v databázi Scopus

—