Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F21%3A00541788" target="_blank" >RIV/61389005:_____/21:00541788 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/44555601:13440/21:43896199

Výsledek na webu

<a href="https://doi.org/10.1016/j.tsf.2021.138571" target="_blank" >https://doi.org/10.1016/j.tsf.2021.138571</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2021.138571" target="_blank" >10.1016/j.tsf.2021.138571</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

Popis výsledku v původním jazyce

The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 mu m thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of inplane compressive residual stresses from -2.5 to - 0.75 GPa after the irradiation, which is correlated with the calculated displacements per atom within a similar to 2 mu m thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.

Název v anglickém jazyce

Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

Popis výsledku anglicky

The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 mu m thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of inplane compressive residual stresses from -2.5 to - 0.75 GPa after the irradiation, which is correlated with the calculated displacements per atom within a similar to 2 mu m thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

1879-2731

Svazek periodika

722

Číslo periodika v rámci svazku

MAR

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

138571

Kód UT WoS článku

000632481900003

EID výsledku v databázi Scopus

2-s2.0-85101013325