Comparison between conventional Si and new generation of SiC detector for high proton energy spectrometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F24%3A00586150" target="_blank" >RIV/61389005:_____/24:00586150 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1088/1748-0221/19/04/P04032" target="_blank" >https://doi.org/10.1088/1748-0221/19/04/P04032</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/19/04/P04032" target="_blank" >10.1088/1748-0221/19/04/P04032</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison between conventional Si and new generation of SiC detector for high proton energy spectrometry

Popis výsledku v původním jazyce

A SiC Schottky diode and a Si surface barrier detector have been compared during Rutherford backscattering spectrometry (RBS) using 2-3 MeV proton beams. Both detectors are suited to detect high energetic ions with high-energy resolution for spectroscopic analysis. The correlations between the detector parameters and the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency and energy resolution, are outlined. Comparative RBS analysis performed using SiC and Si detectors has been investigated to highlight the advantages and disadvantages of the use of SiC with respect to the traditional Si junction detector. RBS spectrometry has been carried out using projectiles of proton incident on different targets to analyse their composition and thickness by the detection of the backscattered ions revealed by Si and SiC detectors.

Název v anglickém jazyce

Comparison between conventional Si and new generation of SiC detector for high proton energy spectrometry

Popis výsledku anglicky

A SiC Schottky diode and a Si surface barrier detector have been compared during Rutherford backscattering spectrometry (RBS) using 2-3 MeV proton beams. Both detectors are suited to detect high energetic ions with high-energy resolution for spectroscopic analysis. The correlations between the detector parameters and the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency and energy resolution, are outlined. Comparative RBS analysis performed using SiC and Si detectors has been investigated to highlight the advantages and disadvantages of the use of SiC with respect to the traditional Si junction detector. RBS spectrometry has been carried out using projectiles of proton incident on different targets to analyse their composition and thickness by the detection of the backscattered ions revealed by Si and SiC detectors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

19

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

P04032

Kód UT WoS článku

001222003900001

EID výsledku v databázi Scopus

2-s2.0-85191519561