Emulating synaptic plasticity with a poly[N-(3-(9H-carbazol-9-yl)propyl)methacrylamide] memristor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F24%3A00588497" target="_blank" >RIV/61389013:_____/24:00588497 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/24:10493907

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlelanding/2024/ma/d4ma00399c" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2024/ma/d4ma00399c</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/D4MA00399C" target="_blank" >10.1039/D4MA00399C</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Emulating synaptic plasticity with a poly[N-(3-(9H-carbazol-9-yl)propyl)methacrylamide] memristor

Popis výsledku v původním jazyce

Synaptic plasticity, denoting the variable strength of communication between adjacent neurons, represents a fundamental property of nervous systems that governs learning/forgetting and information storage in memory. It is shown here that a memristor with a poly [N-(3-(9H-carbazole-9-yl) propyl)methacrylamide] (PCaPMA) active layer, sandwiched between ITO and Au or Al electrodes, can emulate such a function. Its resistance, stimulated by a series of low amplitude voltage pulses, can gradually increase or decrease depending on the polarity, number, and frequency of stimulation pulses. Such behaviour is analogous to the potentiation and depression of neuronal synapses. A variety of synaptic functions, including short- and long-term plasticity, paired-pulse facilitation/depression (PPF/D), spike-timing-dependent plasticity (STDP), and associative learning, have been comprehensively explored on the millisecond timescale and the results suggest the possibility of linking device functions to biological synapse processes. The reported electrical properties have been attributed to a combination of several mechanisms, such as voltage-induced conformation changes, trapping/detrapping of charge carriers at localized sites, and redox phenomena. The results suggest the potential use of this device for applications in artificial intelligence and neuromorphic computing.

Název v anglickém jazyce

Emulating synaptic plasticity with a poly[N-(3-(9H-carbazol-9-yl)propyl)methacrylamide] memristor

Popis výsledku anglicky

Synaptic plasticity, denoting the variable strength of communication between adjacent neurons, represents a fundamental property of nervous systems that governs learning/forgetting and information storage in memory. It is shown here that a memristor with a poly [N-(3-(9H-carbazole-9-yl) propyl)methacrylamide] (PCaPMA) active layer, sandwiched between ITO and Au or Al electrodes, can emulate such a function. Its resistance, stimulated by a series of low amplitude voltage pulses, can gradually increase or decrease depending on the polarity, number, and frequency of stimulation pulses. Such behaviour is analogous to the potentiation and depression of neuronal synapses. A variety of synaptic functions, including short- and long-term plasticity, paired-pulse facilitation/depression (PPF/D), spike-timing-dependent plasticity (STDP), and associative learning, have been comprehensively explored on the millisecond timescale and the results suggest the possibility of linking device functions to biological synapse processes. The reported electrical properties have been attributed to a combination of several mechanisms, such as voltage-induced conformation changes, trapping/detrapping of charge carriers at localized sites, and redox phenomena. The results suggest the potential use of this device for applications in artificial intelligence and neuromorphic computing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10404 - Polymer science

Projekt

<a href="/cs/project/GA24-10384S" target="_blank" >GA24-10384S: Polymerní memristory s neurosynaptickými vlastnostmi</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Advances

ISSN

2633-5409

e-ISSN

2633-5409

Svazek periodika

5

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

6388-6398

Kód UT WoS článku

001268448200001

EID výsledku v databázi Scopus

2-s2.0-85198658643