Control of chemical composition of PZT thin films produced by ion-beam deposition from a multicomponent target

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F16%3A00469301" target="_blank" >RIV/61389021:_____/16:00469301 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2257331" target="_blank" >http://dx.doi.org/10.1117/12.2257331</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2257331" target="_blank" >10.1117/12.2257331</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Control of chemical composition of PZT thin films produced by ion-beam deposition from a multicomponent target

Popis výsledku v původním jazyce

The crystallization process takes place during annealing under high temperatures, which is linked to heavy lead losses, so the lead has to be in excess. Therefore, this paper is devoted to the control of chemical composition of PZT thin films deposited via ion beam sputtering (IBS). A commonly used approach for IBS relies on employing a multicomponent target to obtain films with the same composition as that of the target. However, in the case of PZT it is favorable to have the ability to controllably change the chemical composition of thin films in order to acquire high perovskite content. Our study revealed that the determinative lead content in PZT layers prepared by simple and dual ion-beam deposition from a multicomponent target can be easily controlled by the power of primary ion source. At the same time, the composition is also dependent on the substrate temperature and the power of assistant ion source. Thin PZT films with more than 30 % lead excess were acquired from a stoichiometric multicomponent target (i.e. a target without any lead excess). We can therefore propose several possible sets of deposition parameters suitable for the PZT deposition via IBS to obtain high perovskite content.

Název v anglickém jazyce

Control of chemical composition of PZT thin films produced by ion-beam deposition from a multicomponent target

Popis výsledku anglicky

The crystallization process takes place during annealing under high temperatures, which is linked to heavy lead losses, so the lead has to be in excess. Therefore, this paper is devoted to the control of chemical composition of PZT thin films deposited via ion beam sputtering (IBS). A commonly used approach for IBS relies on employing a multicomponent target to obtain films with the same composition as that of the target. However, in the case of PZT it is favorable to have the ability to controllably change the chemical composition of thin films in order to acquire high perovskite content. Our study revealed that the determinative lead content in PZT layers prepared by simple and dual ion-beam deposition from a multicomponent target can be easily controlled by the power of primary ion source. At the same time, the composition is also dependent on the substrate temperature and the power of assistant ion source. Thin PZT films with more than 30 % lead excess were acquired from a stoichiometric multicomponent target (i.e. a target without any lead excess). We can therefore propose several possible sets of deposition parameters suitable for the PZT deposition via IBS to obtain high perovskite content.

Druh

D - Stať ve sborníku

CEP obor

JJ - Ostatní materiály

OECD FORD obor

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Projekt

<a href="/cs/project/LO1206" target="_blank" >LO1206: Moderní optické systémy a technologie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE 10151, Optics and Measurement International Conference 2016

ISBN

978-1-5106-0753-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

7

Strana od-do

—

Název nakladatele

SPIE, Society of Photo-Optical Instrumentation Engineers

Místo vydání

Bellingham

Místo konání akce

Liberec

Datum konání akce

11. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000393154700028