Influence of oxygen on the quality of the PZT thin films prepared by IBS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F16%3A00469300" target="_blank" >RIV/61389021:_____/16:00469300 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2257224" target="_blank" >http://dx.doi.org/10.1117/12.2257224</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2257224" target="_blank" >10.1117/12.2257224</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of oxygen on the quality of the PZT thin films prepared by IBS

Popis výsledku v původním jazyce

Pb(Zr,Ti)O3 (PZT) is a ferroelectric material interesting for its high dielectric constant and piezoelectric response. PZT thin films can be prepared by various methods, e.g. pulsed laser deposition, chemical vapor deposition, sol-gel and, most frequently, sputtering. Though the magnetron sputtering is used more frequently, PZT thin films can be prepared also by ion-beam sputtering (IBS). In this paper we study the deposition process of PZT thin films in our IBS system with a possibility of ion-beam assisted deposition (IBAD), which has the advantage that more energy can be added to the growing layer. We show how in our system the resulting layers, mainly their quality, the Pb content, which is important for the creation of the perovskite crystal structure, and the resulting crystal structure are influenced by the oxygen flux during the deposition for the samples grown on the silicon substrate with and without an intermediate Ti seeding layer.

Název v anglickém jazyce

Influence of oxygen on the quality of the PZT thin films prepared by IBS

Popis výsledku anglicky

Pb(Zr,Ti)O3 (PZT) is a ferroelectric material interesting for its high dielectric constant and piezoelectric response. PZT thin films can be prepared by various methods, e.g. pulsed laser deposition, chemical vapor deposition, sol-gel and, most frequently, sputtering. Though the magnetron sputtering is used more frequently, PZT thin films can be prepared also by ion-beam sputtering (IBS). In this paper we study the deposition process of PZT thin films in our IBS system with a possibility of ion-beam assisted deposition (IBAD), which has the advantage that more energy can be added to the growing layer. We show how in our system the resulting layers, mainly their quality, the Pb content, which is important for the creation of the perovskite crystal structure, and the resulting crystal structure are influenced by the oxygen flux during the deposition for the samples grown on the silicon substrate with and without an intermediate Ti seeding layer.

Druh

D - Stať ve sborníku

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

—

Projekt

<a href="/cs/project/LO1206" target="_blank" >LO1206: Moderní optické systémy a technologie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE 10151, Optics and Measurement International Conference 2016

ISBN

978-1-5106-0753-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

14

Strana od-do

—

Název nakladatele

SPIE, Society of Photo-Optical Instrumentation Engineers

Místo vydání

Bellingham

Místo konání akce

Liberec

Datum konání akce

11. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000393154700043