Attempt to prepare perovskite PZT at low temperatures using IBAD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F16%3A00469302" target="_blank" >RIV/61389021:_____/16:00469302 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2257328" target="_blank" >http://dx.doi.org/10.1117/12.2257328</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2257328" target="_blank" >10.1117/12.2257328</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Attempt to prepare perovskite PZT at low temperatures using IBAD

Popis výsledku v původním jazyce

Lead zirconate titanate (Pb[ZrxTi1-x]O3 ) is well-known for his excellent ferroelectric, piezoelectric and electromechanical properties. These properties are closely related to the perovskite crystal structure of PZT. A common way to achieve thin film of perovskite PZT is to anneal the layer after deposition. The high annealing temperature (600 – 700°C) limits a set of usable substrates. To grow a thin layer of perovskite PZT at reduced temperature it is necessary to add crystallization energy to the system by another way. In this article are presented some results of using ion beam sputtering system (IBS) with ion beam assistance (IBAD) to growth perovskite PZT layer at reduced temperature. This process is very complicated and the resulting layer properties are strongly influenced by deposition parameters (ions energy, chemical composition of the atmosphere in the sputtering chamber etc.). We achieved partial success when pyrochlore crystal structure of PZT was grown at reduced substrate temperature (110°C) (at this temperatures are the PZT layers usually amorphous)

Název v anglickém jazyce

Attempt to prepare perovskite PZT at low temperatures using IBAD

Popis výsledku anglicky

Lead zirconate titanate (Pb[ZrxTi1-x]O3 ) is well-known for his excellent ferroelectric, piezoelectric and electromechanical properties. These properties are closely related to the perovskite crystal structure of PZT. A common way to achieve thin film of perovskite PZT is to anneal the layer after deposition. The high annealing temperature (600 – 700°C) limits a set of usable substrates. To grow a thin layer of perovskite PZT at reduced temperature it is necessary to add crystallization energy to the system by another way. In this article are presented some results of using ion beam sputtering system (IBS) with ion beam assistance (IBAD) to growth perovskite PZT layer at reduced temperature. This process is very complicated and the resulting layer properties are strongly influenced by deposition parameters (ions energy, chemical composition of the atmosphere in the sputtering chamber etc.). We achieved partial success when pyrochlore crystal structure of PZT was grown at reduced substrate temperature (110°C) (at this temperatures are the PZT layers usually amorphous)

Druh

D - Stať ve sborníku

CEP obor

JH - Keramika, žáruvzdorné materiály a skla

OECD FORD obor

—

Projekt

<a href="/cs/project/LO1206" target="_blank" >LO1206: Moderní optické systémy a technologie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE 10151, Optics and Measurement International Conference 2016

ISBN

978-1-5106-0753-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

5

Strana od-do

—

Název nakladatele

SPIE, Society of Photo-Optical Instrumentation Engineers

Místo vydání

Bellingham

Místo konání akce

Liberec

Datum konání akce

11. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000393154700022