Thermal and nonthermal melting of III-V compound semiconductors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F19%3A00509922" target="_blank" >RIV/61389021:_____/19:00509922 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/19:00521438

Výsledek na webu

<a href="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.144101" target="_blank" >https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.144101</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.99.144101" target="_blank" >10.1103/PhysRevB.99.144101</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermal and nonthermal melting of III-V compound semiconductors

Popis výsledku v původním jazyce

We study theoretically the response of group III-V compound semiconductors (AlAs, AlP, GaAs, GaP, GaSb) to free-electron laser irradiation, identifying their damage thresholds. The employed hybrid code XTANT is capable of modeling both thermal and nonthermal effects under ultrafast electronic excitation. It allowed us to reveal common trends in the studied materials: all but the AlAs III-V compounds studied here exhibit a phase transition into a metallic disordered state of lower density than the solid phase via a thermal phase transition. This transition is instigated by electron-ion coupling at doses below the nonthermal melting. Irradiated AlAs showed two possible phases produced: low-density and high-density liquid. We demonstrate that the transferrable tight-binding method within the Born-Oppenheimer approximation significantly overestimates the damage threshold predicting only nonthermal melting in comparison to a non-Born-Oppenheimer scheme, which accounts for both effects and their interplay.

Název v anglickém jazyce

Thermal and nonthermal melting of III-V compound semiconductors

Popis výsledku anglicky

We study theoretically the response of group III-V compound semiconductors (AlAs, AlP, GaAs, GaP, GaSb) to free-electron laser irradiation, identifying their damage thresholds. The employed hybrid code XTANT is capable of modeling both thermal and nonthermal effects under ultrafast electronic excitation. It allowed us to reveal common trends in the studied materials: all but the AlAs III-V compounds studied here exhibit a phase transition into a metallic disordered state of lower density than the solid phase via a thermal phase transition. This transition is instigated by electron-ion coupling at doses below the nonthermal melting. Irradiated AlAs showed two possible phases produced: low-density and high-density liquid. We demonstrate that the transferrable tight-binding method within the Born-Oppenheimer approximation significantly overestimates the damage threshold predicting only nonthermal melting in comparison to a non-Born-Oppenheimer scheme, which accounts for both effects and their interplay.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

—

Svazek periodika

99

Číslo periodika v rámci svazku

14

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

144101

Kód UT WoS článku

000464717300004

EID výsledku v databázi Scopus

2-s2.0-85065128492