Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61988987%3A17310%2F19%3AA20020TQ" target="_blank" >RIV/61988987:17310/19:A20020TQ - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/19:00509479

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0169433218329337" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433218329337</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2018.10.164" target="_blank" >10.1016/j.apsusc.2018.10.164</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs

Popis výsledku v původním jazyce

A comparative study of diode structures based on semi-insulating (SI) GaAs with evaporated Mg vs. Pt contacts is presented. Electric field strength in the vicinity of the contacts is inferred from the detection of alpha-particles emitted from Am-241 radioisotope. It is shown that at zero bias, the structure with Mg-based contacts (MgO/SI GaAs) gives comparatively small signal implying an ohmic behaviour. Contrary, the structure with Pt contacts reveals presence of a non-negligible electric field near the contacts at zero bias voltage, thus indicating presence of a sizeable space charge region near the interface. The results are supplemented by insights from atomistic electronic structure modeling of idealized GaAs/Pt vs. GaAs/Mg and GaAs/MgO interfaces.

Název v anglickém jazyce

Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs

Popis výsledku anglicky

A comparative study of diode structures based on semi-insulating (SI) GaAs with evaporated Mg vs. Pt contacts is presented. Electric field strength in the vicinity of the contacts is inferred from the detection of alpha-particles emitted from Am-241 radioisotope. It is shown that at zero bias, the structure with Mg-based contacts (MgO/SI GaAs) gives comparatively small signal implying an ohmic behaviour. Contrary, the structure with Pt contacts reveals presence of a non-negligible electric field near the contacts at zero bias voltage, thus indicating presence of a sizeable space charge region near the interface. The results are supplemented by insights from atomistic electronic structure modeling of idealized GaAs/Pt vs. GaAs/Mg and GaAs/MgO interfaces.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

467

Číslo periodika v rámci svazku

February

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

1219-1225

Kód UT WoS článku

000451023500139

EID výsledku v databázi Scopus

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