Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F19%3A10242593" target="_blank" >RIV/61989100:27710/19:10242593 - isvavai.cz</a>

Výsledek na webu

<a href="https://advances.sciencemag.org/content/5/8/eaaw8337" target="_blank" >https://advances.sciencemag.org/content/5/8/eaaw8337</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1126/sciadv.aaw8337" target="_blank" >10.1126/sciadv.aaw8337</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Popis výsledku v původním jazyce

Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm(2) V-1 s(-1) and a greatly reduced sheet resistance of only 130 ohms square(-1). The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.

Název v anglickém jazyce

Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

Popis výsledku anglicky

Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm(2) V-1 s(-1) and a greatly reduced sheet resistance of only 130 ohms square(-1). The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20400 - Chemical engineering

Projekt

<a href="/cs/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institut environmentálních technologií - excelentní výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Science Advances

ISSN

2375-2548

e-ISSN

—

Svazek periodika

5

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000481798400039

EID výsledku v databázi Scopus

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