Numerical investigation on the influence of the Soret effect on graphene growth in chemical vapor deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F23%3A10252889" target="_blank" >RIV/61989100:27710/23:10252889 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.webofscience.com/wos/woscc/full-record/WOS:000999040800001" target="_blank" >https://www.webofscience.com/wos/woscc/full-record/WOS:000999040800001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2023.127253" target="_blank" >10.1016/j.jcrysgro.2023.127253</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Numerical investigation on the influence of the Soret effect on graphene growth in chemical vapor deposition

Popis výsledku v původním jazyce

The chemical vapor deposition (CVD) is highly feasible, controllable and has great potential in the production of large-area and high-quality graphene. Previous studies have focused on surface reaction mechanisms, but it is equally important to understand how reactants are transported to the substrate. Due to the commonly large temperature gradient in the CVD reactor, the impact of Soret effect on the species transportation is nonnegligible. In this article, the influences of the Soret effect under low pressure and atmospheric pressure conditions are systematically studied using computational fluid dynamics. Due to the difference in the composition of the mixture under these two conditions, the impact of Soret effect on diffusion of the methane molecule is opposite. The diffusion behavior caused by the Soret effect will influence the methane distribution and hence the graphene growth rate. At low pressure, the growth rate will decrease gradually when the substrate position moves along the flow direction. At atmospheric pressure, the Soret effect will increase the carbon deposition rate when the Cu substrate is arranged at the front half of the furnace.

Název v anglickém jazyce

Numerical investigation on the influence of the Soret effect on graphene growth in chemical vapor deposition

Popis výsledku anglicky

The chemical vapor deposition (CVD) is highly feasible, controllable and has great potential in the production of large-area and high-quality graphene. Previous studies have focused on surface reaction mechanisms, but it is equally important to understand how reactants are transported to the substrate. Due to the commonly large temperature gradient in the CVD reactor, the impact of Soret effect on the species transportation is nonnegligible. In this article, the influences of the Soret effect under low pressure and atmospheric pressure conditions are systematically studied using computational fluid dynamics. Due to the difference in the composition of the mixture under these two conditions, the impact of Soret effect on diffusion of the methane molecule is opposite. The diffusion behavior caused by the Soret effect will influence the methane distribution and hence the graphene growth rate. At low pressure, the growth rate will decrease gradually when the substrate position moves along the flow direction. At atmospheric pressure, the Soret effect will increase the carbon deposition rate when the Cu substrate is arranged at the front half of the furnace.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

20500 - Materials engineering

Projekt

<a href="/cs/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institut environmentálních technologií - excelentní výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of crystal growth

ISSN

0022-0248

e-ISSN

1873-5002

Svazek periodika

614

Číslo periodika v rámci svazku

Jul 15 2023

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

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Kód UT WoS článku

000999040800001

EID výsledku v databázi Scopus

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