Effect of growth conditions and reactor configuration on the growth uniformity of large-scale graphene by chemical vapor deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F24%3A10254908" target="_blank" >RIV/61989100:27710/24:10254908 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.scopus.com/record/display.uri?eid=2-s2.0-85189932945&origin=resultslist&sort=plf-f&src=s&sid=a4ead8b470657d3c7a3896a0b36dbb74&sot=b&sdt=b&s=TITLE%28Effect+of+growth+conditions+and+reactor+configuration+on+the+growth+uniformity+of+large-scale+graphene+by+chemical+vapor+deposition%29&sl=100&sessionSearchId=a4ead8b470657d3c7a3896a0b36dbb74&relpos=0" target="_blank" >https://www.scopus.com/record/display.uri?eid=2-s2.0-85189932945&origin=resultslist&sort=plf-f&src=s&sid=a4ead8b470657d3c7a3896a0b36dbb74&sot=b&sdt=b&s=TITLE%28Effect+of+growth+conditions+and+reactor+configuration+on+the+growth+uniformity+of+large-scale+graphene+by+chemical+vapor+deposition%29&sl=100&sessionSearchId=a4ead8b470657d3c7a3896a0b36dbb74&relpos=0</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1116/6.0003487" target="_blank" >10.1116/6.0003487</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of growth conditions and reactor configuration on the growth uniformity of large-scale graphene by chemical vapor deposition

Popis výsledku v původním jazyce

Chemical vapor deposition (CVD) is an affordable method for the preparation of large-scale and high-quality graphene. With the increase in CVD reactor size, gas mass transfer, flow state, and gas phase dynamics become more complicated. In this study, computational fluid dynamics is used to investigate factors affecting the uniformity of large-scale graphene growth under different growth conditions and reactor configurations. The dimensionless number defined in this paper and the Grashof number are utilized to distinguish the species transfer patterns and the flow states, respectively. A gas-surface dynamics model is established to simulate the graphene growth. Results reveal that the graphene growth rate uniformity is the highest at very low pressure and flow rate due to the flow symmetry and diffusion-dominated species transfer. At an increased pressure of 20 Torr, the uniformity of the graphene growth rate becomes higher axially and lower circumferentially with an increasing inlet mass flow rate. When the flow rate is fixed at 1500 SCCM and pressure is reduced from 20 to 2 Torr, graphene growth uniformity first increases and then decreases due to the influence of gas phase dynamics. Graphene growth rates are analyzed across ordinary reactor configurations and four configurations with inner tubes at 20 Torr pressure and 1500 SCCM flow rate. Comprehensive evaluation suggests that the ordinary reactor configuration performs best under these conditions. This research offers insights into the macroscopic growth mechanism of large-scale graphene and provides guidance for designing growth conditions in large-area graphene production.

Název v anglickém jazyce

Effect of growth conditions and reactor configuration on the growth uniformity of large-scale graphene by chemical vapor deposition

Popis výsledku anglicky

Chemical vapor deposition (CVD) is an affordable method for the preparation of large-scale and high-quality graphene. With the increase in CVD reactor size, gas mass transfer, flow state, and gas phase dynamics become more complicated. In this study, computational fluid dynamics is used to investigate factors affecting the uniformity of large-scale graphene growth under different growth conditions and reactor configurations. The dimensionless number defined in this paper and the Grashof number are utilized to distinguish the species transfer patterns and the flow states, respectively. A gas-surface dynamics model is established to simulate the graphene growth. Results reveal that the graphene growth rate uniformity is the highest at very low pressure and flow rate due to the flow symmetry and diffusion-dominated species transfer. At an increased pressure of 20 Torr, the uniformity of the graphene growth rate becomes higher axially and lower circumferentially with an increasing inlet mass flow rate. When the flow rate is fixed at 1500 SCCM and pressure is reduced from 20 to 2 Torr, graphene growth uniformity first increases and then decreases due to the influence of gas phase dynamics. Graphene growth rates are analyzed across ordinary reactor configurations and four configurations with inner tubes at 20 Torr pressure and 1500 SCCM flow rate. Comprehensive evaluation suggests that the ordinary reactor configuration performs best under these conditions. This research offers insights into the macroscopic growth mechanism of large-scale graphene and provides guidance for designing growth conditions in large-area graphene production.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21000 - Nano-technology

Projekt

<a href="/cs/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institut environmentálních technologií - excelentní výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

ISSN

0734-2101

e-ISSN

1520-8559

Svazek periodika

42

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

001198358000003

EID výsledku v databázi Scopus

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