Emitter structure design of near-infrared quantum dot light-emitting devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F23%3A10254128" target="_blank" >RIV/61989100:27740/23:10254128 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S1369702123001955?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369702123001955?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mattod.2023.06.004" target="_blank" >10.1016/j.mattod.2023.06.004</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Emitter structure design of near-infrared quantum dot light-emitting devices

Popis výsledku v původním jazyce

Near-infrared (NIR) emitters are indispensable for telecommunication and medical applications. Colloidal semiconductor quantum dots offer plenty of advantages for NIR light-emitting diodes (LEDs) thanks to their size-dependent emission, high exciton binding energy, and low-cost solution processing. Here, we summarize the recent progress in the development of NIR quantum dot LEDs, focusing on how their device structure and emitter properties facilitate improvement of device performance. The challenges and opportunities associated with NIR quantum dot LEDs such as achieving the proper balance between the charge transport and exciton formation, enhancement of device stability, and improvement of device outcoupling efficiency are discussed.

Název v anglickém jazyce

Emitter structure design of near-infrared quantum dot light-emitting devices

Popis výsledku anglicky

Near-infrared (NIR) emitters are indispensable for telecommunication and medical applications. Colloidal semiconductor quantum dots offer plenty of advantages for NIR light-emitting diodes (LEDs) thanks to their size-dependent emission, high exciton binding energy, and low-cost solution processing. Here, we summarize the recent progress in the development of NIR quantum dot LEDs, focusing on how their device structure and emitter properties facilitate improvement of device performance. The challenges and opportunities associated with NIR quantum dot LEDs such as achieving the proper balance between the charge transport and exciton formation, enhancement of device stability, and improvement of device outcoupling efficiency are discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

—

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Today

ISSN

1369-7021

e-ISSN

1873-4103

Svazek periodika

67

Číslo periodika v rámci svazku

July

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

446-467

Kód UT WoS článku

001116741000001

EID výsledku v databázi Scopus

2-s2.0-85163872531