Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985831%3A_____%2F20%3A00524022" target="_blank" >RIV/67985831:_____/20:00524022 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985858:_____/20:00524022 RIV/60461373:22310/20:43920357

Výsledek na webu

<a href="http://hdl.handle.net/11104/0308907" target="_blank" >http://hdl.handle.net/11104/0308907</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matchemphys.2020.123105" target="_blank" >10.1016/j.matchemphys.2020.123105</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.

Popis výsledku v původním jazyce

Pulsed laser deposition and post-annealing was used for the preparation of MnSix and MnGex thin layers in order to study the increase of ferromagnetic properties related to crystalline phases. As-prepared samples were mainly amorphous with Mn concentration ranging from 20 to 50 at.%. Annealing of MnSix and MnGex layers at 600 °C and 350 °C, respectively, led to the formation of crystalline nanoparticles with the diameter from 10 to 20 nm. Magnetization measured at 300 K showed that the annealed MnSix layers exhibited magnetization of 0.07 μB/Mn atom. Magnetization of annealed MnGex layers varied depending on Mn concentration from 0.1 μ B/Mn atom (30 at.%) to 0.4 μ B/Mn atom (47 at.%). Resistivity measurements of the annealed layers showed values typical for highly degenerate silicon (~10-3.Ω.m) and germanium (~10-5.Ω.m). Temperature dependence of resistivity revealed that, after annealing, only MnSix layers with lower Mn concentration preserved a semiconducting behaviour.

Název v anglickém jazyce

Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.

Popis výsledku anglicky

Pulsed laser deposition and post-annealing was used for the preparation of MnSix and MnGex thin layers in order to study the increase of ferromagnetic properties related to crystalline phases. As-prepared samples were mainly amorphous with Mn concentration ranging from 20 to 50 at.%. Annealing of MnSix and MnGex layers at 600 °C and 350 °C, respectively, led to the formation of crystalline nanoparticles with the diameter from 10 to 20 nm. Magnetization measured at 300 K showed that the annealed MnSix layers exhibited magnetization of 0.07 μB/Mn atom. Magnetization of annealed MnGex layers varied depending on Mn concentration from 0.1 μ B/Mn atom (30 at.%) to 0.4 μ B/Mn atom (47 at.%). Resistivity measurements of the annealed layers showed values typical for highly degenerate silicon (~10-3.Ω.m) and germanium (~10-5.Ω.m). Temperature dependence of resistivity revealed that, after annealing, only MnSix layers with lower Mn concentration preserved a semiconducting behaviour.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Chemistry and Physics

ISSN

0254-0584

e-ISSN

—

Svazek periodika

251

Číslo periodika v rámci svazku

SEP 1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

8

Strana od-do

123105

Kód UT WoS článku

000549319900043

EID výsledku v databázi Scopus

2-s2.0-85083815527