Perspectives of miniaturization of β-Ga2O3 devices with graphene electrodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F24%3A00586971" target="_blank" >RIV/67985882:_____/24:00586971 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S1369800124002397?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800124002397?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mssp.2024.108343" target="_blank" >10.1016/j.mssp.2024.108343</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Perspectives of miniaturization of β-Ga2O3 devices with graphene electrodes

Popis výsledku v původním jazyce

Micrometer-scale circular graphene/8-Ga2O3 structures are fabricated by transferring graphene layers to (201) and (010) bulk gallium oxide substrates. Focused ion beam etching is used to downscale the area of the graphene/8-Ga2O3 junctions, and a nanoprobe-based approach is employed for their electrical characterization in the chamber of the scanning electron microscope. Using this approach, the impact of defects in graphene on the electrical characteristics of the junctions is suppressed. A significant difference between the structures fabricated on (201) and (010) gallium oxide surfaces is further demonstrated. By numerical fitting of the measured data, several electric charge transport mechanisms are distinguished depending on the applied bias and orientation of the gallium oxide surface.

Název v anglickém jazyce

Perspectives of miniaturization of β-Ga2O3 devices with graphene electrodes

Popis výsledku anglicky

Micrometer-scale circular graphene/8-Ga2O3 structures are fabricated by transferring graphene layers to (201) and (010) bulk gallium oxide substrates. Focused ion beam etching is used to downscale the area of the graphene/8-Ga2O3 junctions, and a nanoprobe-based approach is employed for their electrical characterization in the chamber of the scanning electron microscope. Using this approach, the impact of defects in graphene on the electrical characteristics of the junctions is suppressed. A significant difference between the structures fabricated on (201) and (010) gallium oxide surfaces is further demonstrated. By numerical fitting of the measured data, several electric charge transport mechanisms are distinguished depending on the applied bias and orientation of the gallium oxide surface.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA20-24366S" target="_blank" >GA20-24366S: Studium mechanizmů transportu náboje přechodu grafen-polovodič</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science in Semiconductor Processing

ISSN

1369-8001

e-ISSN

1873-4081

Svazek periodika

176

Číslo periodika v rámci svazku

15 Jun

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

108343

Kód UT WoS článku

001224765500001

EID výsledku v databázi Scopus

2-s2.0-85188454418