Polarity impacts the electrical properties of CuI/ZnO heterojunctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00638463" target="_blank" >RIV/67985882:_____/25:00638463 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/25:00638463

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S136980012500407X?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S136980012500407X?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mssp.2025.109670" target="_blank" >10.1016/j.mssp.2025.109670</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Polarity impacts the electrical properties of CuI/ZnO heterojunctions

Popis výsledku v původním jazyce

Transparent electronics represents a rapidly evolving field of research with numerous applications, including solar cells, photodetectors, thermoelectric devices, and flat panel displays. Utilization of wide-bandgap semiconductors, such as CuI and ZnO, in transparent electronics demonstrates considerable potential. The quality of the interface between CuI and ZnO is determined by various factors, and is crucial for the fabrication of high-quality heterojunctions. This study examines how surface polarity in ZnO influences the interface quality in such heterojunctions. It is experimentally demonstrated that the distinct interactions between CuI and the O-or Zn-polar faces of ZnO induce an uneven development of interface imperfections. CuI deposition on the Zn-polar face of bulk ZnO and ZnO nanorods results in a lower quality heterojunction with a reduced rectification ratio and an increased ideality factor. On the contrary, a lower density of states is observed for the O-polar face, which is reflected in the decreased ideality factor and increased rectification ratio for the CuI/ZnO heterojunction

Název v anglickém jazyce

Polarity impacts the electrical properties of CuI/ZnO heterojunctions

Popis výsledku anglicky

Transparent electronics represents a rapidly evolving field of research with numerous applications, including solar cells, photodetectors, thermoelectric devices, and flat panel displays. Utilization of wide-bandgap semiconductors, such as CuI and ZnO, in transparent electronics demonstrates considerable potential. The quality of the interface between CuI and ZnO is determined by various factors, and is crucial for the fabrication of high-quality heterojunctions. This study examines how surface polarity in ZnO influences the interface quality in such heterojunctions. It is experimentally demonstrated that the distinct interactions between CuI and the O-or Zn-polar faces of ZnO induce an uneven development of interface imperfections. CuI deposition on the Zn-polar face of bulk ZnO and ZnO nanorods results in a lower quality heterojunction with a reduced rectification ratio and an increased ideality factor. On the contrary, a lower density of states is observed for the O-polar face, which is reflected in the decreased ideality factor and increased rectification ratio for the CuI/ZnO heterojunction

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GA23-05915S" target="_blank" >GA23-05915S: Transport elektrického náboje v heterostrukturách polovodičových oxidů s halogenidy mědi</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science in Semiconductor Processing

ISSN

1369-8001

e-ISSN

1873-4081

Svazek periodika

197

Číslo periodika v rámci svazku

October

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

109670

Kód UT WoS článku

001501978200001

EID výsledku v databázi Scopus

2-s2.0-105005099798