Artificial Synaptic Memristor Based on Ag-ChG Material
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985891%3A_____%2F25%3A00641220" target="_blank" >RIV/67985891:_____/25:00641220 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/60461373:22310/25:43933324
Výsledek na webu
<a href="https://doi.org/10.1109/MIEL66332.2025.11261177" target="_blank" >https://doi.org/10.1109/MIEL66332.2025.11261177</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/MIEL66332.2025.11261177" target="_blank" >10.1109/MIEL66332.2025.11261177</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Artificial Synaptic Memristor Based on Ag-ChG Material
Popis výsledku v původním jazyce
In this paper, the artificial synaptic memristor based on the chalcogenide doped with silver (Ag-ChG) was investigated from the standpoint of its potential application in neuromorphic systems. Preparation of the Ag-ChG material was carried out using melt-quenching technique, and its morphological properties were analysed by using scanning electron microscopy (SEM). Biological synaptic properties of memristor such as synaptic weight and short-term plasticity were studied together with its memristive characteristics. Namely, the current-voltage characteristics of artificial synaptic memristor based on Ag-ChG material were experimentally determined at several voltage biases using different voltage sweeps. When applying several consecutive voltage sweeps, the obtained results showed that synaptic memristor exhibits a typical short-term depression and short-term potentiation. In addition, the observed increase in the synaptic weight could be attributed to strengthening the connection between two artificial neurons, when it would be realized by using the memristor based on the Ag-ChG material.n
Název v anglickém jazyce
Artificial Synaptic Memristor Based on Ag-ChG Material
Popis výsledku anglicky
In this paper, the artificial synaptic memristor based on the chalcogenide doped with silver (Ag-ChG) was investigated from the standpoint of its potential application in neuromorphic systems. Preparation of the Ag-ChG material was carried out using melt-quenching technique, and its morphological properties were analysed by using scanning electron microscopy (SEM). Biological synaptic properties of memristor such as synaptic weight and short-term plasticity were studied together with its memristive characteristics. Namely, the current-voltage characteristics of artificial synaptic memristor based on Ag-ChG material were experimentally determined at several voltage biases using different voltage sweeps. When applying several consecutive voltage sweeps, the obtained results showed that synaptic memristor exhibits a typical short-term depression and short-term potentiation. In addition, the observed increase in the synaptic weight could be attributed to strengthening the connection between two artificial neurons, when it would be realized by using the memristor based on the Ag-ChG material.n
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
20504 - Ceramics
Návaznosti výsledku
Projekt
<a href="/cs/project/GA25-15635S" target="_blank" >GA25-15635S: Fotoindukované jevy ve sklech propustných pro infračervené záření</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Proceedings 2025 IEEE 34th International Conference on Microelectronics
ISBN
979-8-3315-1417-4
ISSN
—
e-ISSN
—
Počet stran výsledku
4
Strana od-do
287-290
Název nakladatele
Institute of electical and electronics engineers
Místo vydání
Danvers
Místo konání akce
Niš
Datum konání akce
13. 10. 2025
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
001661593600054