Nanometer – Thick titanium film as a silicon migration barrier

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F24%3A00588536" target="_blank" >RIV/68081723:_____/24:00588536 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081731:_____/24:00588536 RIV/00216305:26220/24:PU152368

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2352492824013072" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2352492824013072</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mtcomm.2024.109326" target="_blank" >10.1016/j.mtcomm.2024.109326</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nanometer – Thick titanium film as a silicon migration barrier

Popis výsledku v původním jazyce

Diffusion of silicon atoms to the topmost film surface poses significant challenges in various technological applications. In an effort to address this issue, titanium films with varying thicknesses were deposited on a silicon substrate to evaluate the efficacy of a thin titanium barrier film in blocking silicon migration to the upper film surface. Subsequently, the films were subjected to a 1-hour heating process in air at an oxidizing temperature of 430 K. Atomic force microscopy and Raman spectroscopy were employed to characterize the morphological and structural changes among the investigated films. X-ray photoelectron spectroscopy was utilized to explore variations in chemical composition, determine oxidation states, and measure the thicknesses of the thin titanium oxide layers. The findings revealed that titanium films with a thickness < 50 nm experienced silicon diffusion to their upper film surface. Moreover, an increase in the thickness of the oxide layers over the titanium film on the silicon substrate significantly reduced the migration of silicon to the titanium film surface. At 430 K, the study found that oxide layers at least 6.87 nm thick formed on a 35-nm thick titanium layer, which together successfully prevented silicon migration to the top surface of the film.

Název v anglickém jazyce

Nanometer – Thick titanium film as a silicon migration barrier

Popis výsledku anglicky

Diffusion of silicon atoms to the topmost film surface poses significant challenges in various technological applications. In an effort to address this issue, titanium films with varying thicknesses were deposited on a silicon substrate to evaluate the efficacy of a thin titanium barrier film in blocking silicon migration to the upper film surface. Subsequently, the films were subjected to a 1-hour heating process in air at an oxidizing temperature of 430 K. Atomic force microscopy and Raman spectroscopy were employed to characterize the morphological and structural changes among the investigated films. X-ray photoelectron spectroscopy was utilized to explore variations in chemical composition, determine oxidation states, and measure the thicknesses of the thin titanium oxide layers. The findings revealed that titanium films with a thickness < 50 nm experienced silicon diffusion to their upper film surface. Moreover, an increase in the thickness of the oxide layers over the titanium film on the silicon substrate significantly reduced the migration of silicon to the titanium film surface. At 430 K, the study found that oxide layers at least 6.87 nm thick formed on a 35-nm thick titanium layer, which together successfully prevented silicon migration to the top surface of the film.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/LM2023051" target="_blank" >LM2023051: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Today Communications

ISSN

2352-4928

e-ISSN

2352-4928

Svazek periodika

40

Číslo periodika v rámci svazku

August

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

17

Strana od-do

109326

Kód UT WoS článku

001325538400001

EID výsledku v databázi Scopus

2-s2.0-85195254609